Chemical mechanical planarization (CMP) has been widely used for planarization of ILD, STI, plug and wiring processes. In post metal CMP cleaning processes, there are still many problems to be solved. There are several surfaces of materials, such as wiring materials, barrier materials, dielectric materials etc., on the wafer that must be cleaned at the same time,. It is also important to clean these different surfaces without any chemical or mechanical damage. We have confirmed that the Electrolyzed D.I.water is effective in post CMP cleaning for controlling the surface condition during cleaning and leaving a robust surface after CMP. We describe the Electrolyzed D.I.water system and present some results on the cleaning capability and control of the metal surface for application to cleaning after a metal CMP process.