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Ion Implanted p+/n 4H-SiC Junctions: effect of the Heating Rate during Post Implantation Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 911 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0911-B11-01
- Print publication:
- 2006
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- Article
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