A 44-year-old man developed sudden non-fluent aphasia and right hemiplegia due to left striatocapsular infarction (Figure). Neurologic examination revealed gaze deviation to the right with eyes closed, but not with eyes open (Video). There was no spontaneous or gaze-evoked nystagmus, even after elimination of visual fixation. Leftward pursuit was impaired in a craniotopic frame of reference, and horizontal saccades were hypometric in both directions. Head impulse test was normal in the horizontal plane and there were no visual field defects. The contralesional gaze deviation with eye closure persisted for ten days.

Cast AZ31B-H24 magnesium alloy, comprising Mg with 3.27 wt% Al and 0.96 wt% Zn, was cold rolled and subsequently annealed. Global texture evolutions in the specimens were observed by X-ray diffractometry after the thermomechanical processing. Image-based microstructure and texture for the deformed, recrystallized, and grown grains were observed by electron backscattered diffractometry. Recrystallized grains could be distinguished from deformed ones by analyzing grain orientation spread. Split basal texture of ca. ±10–15° in the rolling direction was observed in the cold-rolled sample. Recrystallized grains had widely spread basal poles at nucleation stage; strong {0001} basal texture developed with grain growth during annealing.

Compound semiconductors belong to the most important materials for optoelectronic applications. Many of them exhibit favorable optical properties, such as a direct energy band gap (in contrast to silicon) and high-absorption coefficients over a wide spectral range. Moreover, varying the composition of the compound or substituting some of its elements often allows for controlled band gap engineering and optimization for specific applications. Because many compound semiconductors enable efficient conversion of light into electricity and vice versa, they are commonly used materials for optoelectronic devices.

The liquid lens based on MEMS technology can be an appropriate solution to improve the imaging capability of a capsule endoscope because it can be realized small enough and also consume negligible power. In this paper, a cylinder-type liquid lens was designed to minimize the dead area and then fabricated with MEMS technology combining the silicon thin-film process and the wafer bonding process where the multiple dielectric layer of Teflon, silicon nitride and thermal oxide was formed on the cylinder wall. The focal length of the lens module including the fabricated liquid lens was changed reproducibly as a function of the applied voltage. With the change of 30V in the applied bias, the focal length of the constructed lens module could be tuned in the range of about 42cm. The fabricated liquid lens was also proven to be small enough to be adopted in the capsule endoscope, which means the liquid lens can be utilized for the imaging capability improvement of the capsule endoscope.

Proper selection of an osteotome for nasal osteotomy is important for minimizing soft tissue trauma. Radiographic analysis of the facial bony lateral wall thickness was performed to suggest a guideline for an appropriate osteotome size for Asians. Facial bone computed tomography (CT) of 100 patients (50 male, 50 female) were studied. The thickness of the facial bony lateral wall at three points along the track of a lateral osteotomy, and two points along the track of a medial osteotomy and intermediate osteotomy were measured. The average bony thickness along the track of a lateral osteotomy was 2.61 ± 0.66 mm at the low level, 2.75 ± 0.76 mm at the middle level, and 2.72 ± 0.53 mm at the high level in subjects. The average bony thickness along the track of an intermediate osteotomy were 1.26 ± 0.34 mm at the low level, and 1.31 ± 0.32 mm at the high level in the subjects. The average bony thickness along the track of the medial osteotomy were 2.54 ± 0.31 mm at the lowlevel, and 2.77 ± 0.30 mm at the high level in subjects. These results may provide a guideline for choosing an osteotome of appropriate size for the Asian population.

Capacitance-voltage was investigated for amorphous silicon quantum dots (a-Si QDs) embedded in a silicon nitride as a function of dot size and nitride thickness. a-Sci QDs were grown by plasma enhanced chemical vapor deposition. The electron charging was decreased as the dot size was decreased. These results showed that the conduction band shift is larger than the valence band shift as the dot size decreased and, as a result, electrons are easily discharged in a-Si QDs due to the lower barrier height. For high dot-density-sample, the capacitance-voltage curves were also shifted toward the negative voltage direction when a higher forward bias was applied at forward condition due to the transfer of electrons trapped in the a-Sci QDs from the a-Sci QDs near Si substrate to those near the top metal.