In this era of spatially resolved observations of planet-forming disks with Atacama Large Millimeter Array (ALMA) and large ground-based telescopes such as the Very Large Telescope (VLT), Keck, and Subaru, we still lack statistically relevant information on the quantity and composition of the material that is building the planets, such as the total disk gas mass, the ice content of dust, and the state of water in planetesimals. SPace Infrared telescope for Cosmology and Astrophysics (SPICA) is an infrared space mission concept developed jointly by Japan Aerospace Exploration Agency (JAXA) and European Space Agency (ESA) to address these questions. The key unique capabilities of SPICA that enable this research are (1) the wide spectral coverage $10{-}220\,\mu\mathrm{m}$ , (2) the high line detection sensitivity of $(1{-}2) \times 10^{-19}\,\mathrm{W\,m}^{-2}$ with $R \sim 2\,000{-}5\,000$ in the far-IR (SAFARI), and $10^{-20}\,\mathrm{W\,m}^{-2}$ with $R \sim 29\,000$ in the mid-IR (SPICA Mid-infrared Instrument (SMI), spectrally resolving line profiles), (3) the high far-IR continuum sensitivity of 0.45 mJy (SAFARI), and (4) the observing efficiency for point source surveys. This paper details how mid- to far-IR infrared spectra will be unique in measuring the gas masses and water/ice content of disks and how these quantities evolve during the planet-forming period. These observations will clarify the crucial transition when disks exhaust their primordial gas and further planet formation requires secondary gas produced from planetesimals. The high spectral resolution mid-IR is also unique for determining the location of the snowline dividing the rocky and icy mass reservoirs within the disk and how the divide evolves during the build-up of planetary systems. Infrared spectroscopy (mid- to far-IR) of key solid-state bands is crucial for assessing whether extensive radial mixing, which is part of our Solar System history, is a general process occurring in most planetary systems and whether extrasolar planetesimals are similar to our Solar System comets/asteroids. We demonstrate that the SPICA mission concept would allow us to achieve the above ambitious science goals through large surveys of several hundred disks within $\sim\!2.5$ months of observing time.

Having disk-to-star accretion rates on the order of 10-4M⊙/yr, FU Orionis-type stars (FUors) are thought to be the visible examples for episodic accretion. FUors are often surrounded by massive envelopes, which replenish the disk material and enable the disk to produce accretion outbursts. We observed the FUor-type star V346 Nor with ALMA at 1.3 mm continuum and in different CO rotational lines. We mapped the density and velocity structure of its envelope and analyzed the results using channel maps, position-velocity diagrams, and spectro-astrometric methods. We discovered a pseudo-disk and a Keplerian disk around a 0.1 M⊙ central star. We determined an infall rate from the envelope onto the disk of 6×10-6M⊙/yr, a factor of few higher than the quiescent accretion rate from the disk onto the star. This hints for a mismatch between the infall and accretion rates as the cause of the eruption.

Epidemiological surveys suggest that a higher intake of tea may be associated with a lower risk of CHD. There is accumulating evidence that postprandial lipaemia makes a substantial contribution to the incidence of CHD. Our aim was, therefore, to evaluate the effect of tea catechins (major ingredients in green tea) on postprandial lipid responses in human subjects after the consumption of test meals. In a randomized triple-crossover design, nine male subjects with mild or borderline hypertriacylglycerolaemia consumed 10 (control), 224 (moderate dose) and 674 mg (high dose) of the assigned tea catechins three times each along with a standardized light meal consisting of a piece of bread spread with 20 g butter. Plasma lipids were measured in the fasting state and 1, 2, 3, 4 and 6 h after consuming the light meal. Results showed that, compared with the control, moderate and high doses of tea catechins reduced the incremental area under the plasma triacylglycerol curves by 15·1 and 28·7 %, respectively. Next, the rapid elevation of remnant-like particle cholesterol was significantly inhibited by a high dose of tea catechins 2 h after consuming the light meal (P<0·01). In the range of tea catechin dosages, no significant differences were observed in the postprandial responses for plasma total cholesterol or NEFA at any time point. In conclusion, this trial demonstrated that tea catechins attenuated the postprandial increase in plasma triacylglycerol levels following a fat load. These results may provide evidence for one of the possible mechanisms involved in lowering the incidence of CVD, and may prove useful in further studies on the beneficial health effects of tea drinking.

We present near-infrared spectroscopy of low-mass companions in the HD 130948 system (Goto et al. 2002a). Adaptive optics on the Subaru Telescope allowed for spectroscopy of the individual components of the 0″.13 binary system. Based on a direct comparison with a series of template spectra, we determined the spectral types of HD 130948B and C to be L4 ± 1. We find they are most likely a binary brown dwarf system.

Results are presented of a study on the mechanical stress dependence of the resistance of polycrystalline silicon (Poly-Si) films, doped with different atomic species. Two types of Poly-Si film implanted with boron and phosphorus ions were studied, namely, B-doped films of 400 nm and P-doped layers of 250 nm thickness, which were deposited by LPCVD at 620 °C on thermally oxidized silicon wafers. Film doping was done by ion implantation at 50 keV, with a dose of boron and phosphorus of 2 × 1014 and 5.3 × 1014 cm−2, respectively. The Poly-Si films were annealed in a H2 ambient at 1000 °C for 20 min to activate the implanted atoms. A controlled amount of external stress was applied to the silicon wafers in order to study the impact on the electrical performance of the implanted Poly-Si resistors. The resistance of the B-doped Poly-Si films is shown to increase by the mechanical stress, while the resistance of the P-implanted Poly-Si films remained unchanged. It is concluded that this difference is related to the structural differences between Poly-Si films implanted with boron and phosphorus, respectively.

The degradation of the electrical performance of strained Si1-xGex epitaxial diodes by 220-MeV carbon particles is reported and compared with the effect of 20-MeV alpha rays and 20-MeV protons. The macroscopic damage is studied in a broad fluence range and for different Ge contents, ranging from 8 to 16 %. It is shown that the radiation damage of carbon irradiated diodes is about one order of magnitude larger than that for alpha ray irradiation, which can be explained by considering the difference of the nonionizing energy loss (NIEL). It is observed that the reverse current at a fixed bias increases with increasing fluence, while the rate of increase decreases with increasing fluence and/or Ge content. The fact that a close to square root dependence exists between the boron deactivation in the diode depletion region, derived from capacitance-voltage measurements and the reverse current increase suggests that the device degradation is dominated by radiation induced deep levels associated with interstitial boron complexes.

Results are presented of a study on the degradation of the electrical and optical performance of n+p Si avalanche photodiodes, subjected to 1-MeV fast neutrons and to a 220-MeV carbon irradiation. The dark current increases after irradiation, while the photo current decreases. Two dominant hole capture levels, which are responsible for the degradation of performance, are after irradiation observed by DLTS (Deep Level Transient Spectroscopy). The degradation caused by neutron irradiation is smaller than that for carbon irradiation. The differences in the radiation damage are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

Results are presented for the first time of a study on the degradation of the electrical performance of MOSFET's processed on SIMOX substrates and subjected to a 220-MeV carbon irradiation. For the n-MOSFETs an unstable increase of the drain current in linear operation is found, while for the p-MOSFETs, a drastic reduction is observed, both in linear operation and in saturation. The radiation damage is also compared to the results for 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays. The differences in the damage coefficients are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

Results are presented of a study on the degradation and recovery behavior of strained Si 1−xGex diodes and heterojunction bipolar transistors (HBTs) by electron and neutron irradiation. The degradation of device performance and the generation of lattice defects are reported as a function of germanium content and radiation source. Isochronal annealing is performed to study the recovery behavior of the irradiated devices. The radiation source dependence of the degradation is discussed taking into account the absorbed energy dunng irradiation.

The detector material used in this experimments is Ultra-High Purity p-type Si crystal. The material was single-crystalized through floating zone process from poly-crystal grown by thermal decomposition of highly refined mono-silane gas which had been purified by molecular sieves of specially prepared Zeolite powder.

The resisitivity at room temperature is normally above 30 kΩ.cm, and the value of the highest grade ones exceeds 100kΩ.cm which corresponds to the Boron concentration of 1.5×l011 B/cm3.

The potentiality of this material for detector use was investigated through Surface Barrier Detector fabrication. Detectors of above 4 mm thick and of excellent characteristics both at room temperature and at liq. N2 temperature could readily be fabricated. Owing to tie extremely high resisitivity, detectors can be made either partially depleted or totally depleted simply by properly selecting the wafer resisitivity and the thickness.

In detector fabrication, the proper surface chemical treatment is very important, and seriously affects the leakage current and breakdown characteristics.

Ultra-High Purity Si is promising as new detector material and has good potentiality to replace Si(Li) as followings:

1) simple and easy detector fabrication,

2) potentiality of thick detector fabrication (∼1cm),

3) no precipitation problem of Li ions, and

4) feasibility of thick ⊿E detector with thin entrance window on both faces.