It is required for the reliable semiconductor to control high junction quality in wire bonding.
It is expected that the Al film properties may considerably affect the junction quality. Yamamoto et al. studied the effects of Al film properties on the bondability in wire bonding by thermocompression bonding system, and disclosed that the breakability of oxide film on the Al is a key factor. 
In this report, effects of fabrication condition, properties and bond-ability of Al thin film were investigated in wire bonding by thermosonic bonding system. As a result, it has clarified that concentration of impurities in the Al film is an extremely influential factor for the stability of adhesion and the expansion of alloying region in the junction boundary, that is, for the improvement of junction quality.