6 results
RTA-Preparation of β-FeSi2 Layers from MBE-Grown Fe-Si Films Deposited on Si and Relaxed SiGe (100) Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 387 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 407
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- 1995
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Morphologies and Growth Modes of Fesi and β-Fesi2 Layers Prepared by Rapid Thermal Annealing
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- Journal:
- MRS Online Proceedings Library Archive / Volume 402 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 373
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- 1995
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Structural and Electrical Characterization of FeSix – Layers (1≤ X ≤2) Prepared by RTP of Fe Layers Sputtered on Si (100)
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- Journal:
- MRS Online Proceedings Library Archive / Volume 387 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 389
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- 1995
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On the Recombination Activity of Oxygen Precipitation Related Lattice Defects in Silicon
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- Journal:
- MRS Online Proceedings Library Archive / Volume 378 / 1995
- Published online by Cambridge University Press:
- 26 February 2011, 35
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- 1995
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X-Ray Diffraction and Reflectance, Raman Scattering and Photoluminescence Characterization of Thermally Annealed Epitaxial SI1-XGEX Layers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 298 / 1993
- Published online by Cambridge University Press:
- 25 February 2011, 51
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- 1993
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Study of The Transversal Electron Mobility in Heterojunction Bipolar Transistors with Strained SI1−x Gex-Base
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- Journal:
- MRS Online Proceedings Library Archive / Volume 281 / 1992
- Published online by Cambridge University Press:
- 25 February 2011, 409
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- 1992
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