In this work the Si interstitial contribution of F+ implants in crystalline Si is quantified by the analysis of extended defects and B diffusion in samples implanted with 25 keV F+ and/or 40 keV Si+. We estimate that approximately 0.4-0.5 Si interstitials are generated per implanted F+ ion, which is in good agreement with the value resulting from the net separation of Frenkel pairs obtained from MARLOWE simulations. The damage created by F+ implants in crystalline Si may explain the presence of extended defects in F-enriched samples and the evolution of B profiles during annealing. For short anneals, B diffusion is reduced when F+ is co-implanted with Si+ compared to the sample only implanted with Si+, due to the formation of more stable defects that set a lower Si interstitial supersaturation. For longer anneals, when defects have dissolved and TED is complete, B diffusion is higher because the additional damage created by the F+ implant has contributed to enhance B diffusion.

Semiconducting nanowires are emerging as a route to combine heavily mismatched materials. The high level of control on wire dimensions and chemical composition makes them promising materials to be integrated in future silicon technologies as well as to be the active element in optoelectronic devices.

This ar ticle reviews the recent progress in epitaxial growth of nanowires on non-corresponding substrates. We highlight the advantage of using small dimensions to facilitate accommodation of the lattice strain at the surface of the structures. More specifically, we will focus on the growth of III-V nanowires on Group IV substrates. This approach enables the integration of high-perform ance III-V semiconductors monolithically into mature silicon technology, since fundamental issues of III-V integration on Si such as lattice and thermal expansion mismatch can be overcome. Moreover, as there will only be one nucleation site per crystallite, the system will not suffer from antiphase boundaries.

Issues that affect the electronic properties of the heterojunction, such as the crystallographic quality and diffusion of elements across the heterointerface, will be discussed. Finally, we address potential applications of vertical III-V nanowires grown on silicon.

We present a study of the morphologies and stellar content of the galaxies in the central ∼ 74”×64” region of the galaxy cluster Abell 2218 (see Fig. 1). The spectroscopic data were obtained with the integral field unit PMAS (Roth et al. 2005) in the PPAK mode (Verheijen et al. 2004; Kelz et al. 2006), at the 3.5 m telescope of the Calar Alto Observatory. The covered wavelength range was 4650–8000 Å, with a spectral resolution FWHM∼ 10Å. These data were combined with with deep HST/ACS F475W, F555W, F625W and F850LP imaging, and additional data from the literature.

In Fig. 2 we show the rest-frame B-V vs. MV colour-magnitude diagram for the identified cluster members. The data are segregated according to an objective morphological classification based on the Sérsic index. Contrary to previous results (e.g. Ziegler et al. 2001; Smail et al. 2001) there is a clear indication that the cluster population is not dominated by early-type galaxies, and that there exists an almost parity between early- and late-type objects. In addition, the late-type galaxies spread over a wider range of colours and luminosities with respect to the early-types. This indicates that early-type objects are more massive and have older stellar populations, while late-type galaxies are less massive and exhibit a wider range of stellar population properties.

The results agree with the two-steps scenario for the evolution of galaxies in clusters (e.g. Poggianti 2003), which explains the co-existence of a primordial population of early-type galaxies formed at early epochs, with an additional population of late-type galaxies that have been captured by the cluster, infalling, suffering a short enhancement of the star formation that is later quenched by the interaction with the environment, and that afterwards evolved passively, becoming redder and fainter. Finally, galaxy-galaxy interactions and dry merging processes were responsible for the building up of new massive spheroidal galaxies.

Full details are given in Sánchez et al. (2007).

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

We calculate in detail the expected properties of low redshift DLAs under the assumption that they arise in the gaseous disks of galaxies like those in the $z\approx 0$ population. A sample of 355 nearby galaxies were analysed, for which high quality H I 21-cm emission line maps are available as part of an extensive survey with the Westerbork telescope (WHISP). We find that expected luminosities, impact parameters between quasars and DLA host galaxies, and metal abundances are in good agreement with the observed properties of DLAs and DLA galaxies. The measured redshift number density of $z=0$ gas above the DLA limit is $dN/dz=0.045\pm 0.006$, which compared to higher $z$ measurements implies that there is no evolution in the co-moving density of DLAs along a line of sight between $z\sim 1.5$ and $z=0$, and a decrease of only a factor of two from $z\sim 4$ to the present time. We conclude that the local galaxy population can explain all properties of low redshift DLAs.

Systematic effects on HI and Hα long-slit observations make a measurement of the inner slope of the dark matter density distribution difficult to determine. Halos with constant density cores and ones with r–1 profiles both appear consistent with the data, although constant density cores generally provide better fits. High-resolution, two-dimensional velocity fields remove most of the systematic effects, yet as a result of noncircular and random motions the inner slopes still cannot be accurately measured. Halo concentration parameters provide a more useful test of cosmological models because they are more tightly constrained by observations. the concentration parameters for LSB galaxies appear consistent with, but on the low end of the distribution predicted by CDM.

Indium phosphide (InP) nanowires and nanotubes have been synthesized via the vapor-liquid-solid (VLS) growth mechanism. The wires as well as the tubes are crystalline and have the (bulk) zinc blende structure. Compared to the nanowires the nantubes are formed at higher temperatures. A simple model for the formation of the nanotubes is presented. The diameter of the wires and the wall thickness of the tubes can be controlled by the synthesis temperature. Photoluminescence measurements on individual wires show a strong polarization dependency. Moreover, the nanostructures exhibit a considerable blue shift with respect to bulk emission as a result of size-quantization. In addition, this blue shift indicates that the optical properties are not dominated by defect states.

As the first result of spectroscopic monitoring of WR46 (HD 104994, WN3p) in 1991, a preliminary radial-velocity curve is presented with P = 6.8 hr, confirming the binary nature suggested from photometry.