Integrating oxide heterostructures on silicon has the potential to leverage themultifunctionalities of oxide systems into semiconductor device technology. Wepresent the growth and characterization of two-dimensional electron gas (2DEG)oxide systems LaTiO3/SrTiO3 (LTO/STO) andGdTiO3/SrTiO3 (GTO/STO) on Si(001). We showinterface-based conductivity in the oxide films and measure high electrondensities ranging from ∼9 × 1013 cm-2interface-1 in GTO/STO/Si to ∼9 ×1014 cm-2 interface-1 in LTO/STO/Si. Weattribute the higher measured carrier density in the LTO/STO films to a higherconcentration of interface-bound oxygen vacancies arising from a lower oxygenpartial pressure during growth. These vacancies donate conduction electrons andresult in an increased measured carrier density. The integration of such 2DEGoxide systems with silicon provides a bridge between the diverse electronicproperties of oxide systems and the established semiconductor platform andpoints toward new devices and functionalities.
