Dietary antioxidant indices (DAI) may be potentially associated with relative telomere length (RTL) of leucocytes. This study aimed to investigate the relationship between DAI and RTL. A cross-sectional study involving 1656 participants was conducted. A generalised linear regression model and a restricted cubic spline model were used to assess the correlation of DAI and its components with RTL. Generalised linear regression analysis revealed that DAI (β = 0·005, P = 0·002) and the intake of its constituents vitamin C (β = 0·043, P = 0·027), vitamin E (β = 0·088, P < 0·001), Se (β = 0·075, P = 0·003), and Zn (β = 0·075, P = 0·023) were significantly and positively correlated with RTL. Sex-stratified analysis showed that DAI (β = 0·006, P = 0·005) and its constituents vitamin E (β = 0·083, P = 0·012), Se (β = 0·093, P = 0·006), and Zn (β = 0·092, P = 0·034) were significantly and positively correlated with RTL among females. Meanwhile, among males, only vitamin E intake (β = 0·089, P = 0·013) was significantly and positively associated with RTL. Restricted cubic spline analysis revealed linear positive associations between DAI and its constituents’ (vitamin E, Se and Zn) intake and RTL in the total population. Sex-stratified analysis revealed a linear positive correlation between DAI and its constituents’ (vitamin E, Se and Zn) intake and RTL in females. Our study found a significant positive correlation between DAI and RTL, with sex differences.

X-ray powder diffraction (XRD) data, unit-cell parameters and space group for 7-ethyl-14-nitro-camptothecin, C22H19N3O6, are reported [a = 10.987(5) Å, b = 10.941 (9) Å, c = 8.438 (2) Å, α = 71.321(6)°, β = 96.145(0)°, γ = 95.139(3)°, unit-cell volume V = 953.87 Å3, Z = 2, ρcal = 1.467 g cm−3, and space group P-1]. All measured lines were indexed and are consistent with the P-1 space group. No detectable impurities were observed.

Photoanodes based on TiO2-polyheptazine (TiO2-PH) hybrids are, due to the energetics of photogenerated charges, very promising for solar water splitting in terms of possibly reduced need for external electric bias. Visible (λ > 420 nm) light-driven photooxidation of water at TiO2-PH electrodes loaded with two different metal oxide cocatalysts was investigated. As compared with TiO2-PH photoanodes loaded with colloidal [iridium (IV) oxide] IrO2 deposited by colloidal deposition, photoelectrodes modified with CoOx oxygen-evolving cocatalyst (Co-Pi) deposited by photoassisted deposition precipitation method showed both higher photocurrents and more efficient oxygen evolution under prolonged irradiation. The minimum external electric bias needed to observe complete photooxidation of water to dioxygen at TiO2-PH photoanodes modified with Co-Pi was estimated to be ∼0.6 V at pH 7. The key factor limiting the photoconversion efficiency at low bias potentials is the fast primary recombination of photogenerated charges.

Visible (λ > 420 nm) light-driven photooxidation of water at TiO2-polyheptazine (TiO2-PH) hybrid photoanodes loaded with two different metal oxide co-catalysts was investigated in a twoelectrode setup. As compared to TiO2-PH photoanodes loaded with colloidal IrO2, photoelectrodes modified with photodeposited CoOx oxygen-evolving co-catalyst (Co-Pi) showed both higher photocurrents and more efficient oxygen evolution. The minimum external electric bias needed to observe complete photooxidation of water to dioxygen at TiO2-PH photoanodes modified with Co-Pi was estimated to be ca. 0.6 V at pH 7.

A simple approach, order–disorder transition (ODT), has been developed to synthesize a novel glass using ZSM-5 as starting materials. In this process, the ZSM-5 powders were pressed uniaxially in a graphite die and rapidly sintered using spark plasma sintering (SPS). High-resolution transmission electron microscopic images revealed that a few crystalline zeolite fragments were still preserved locally inside the SPS consolidated sample. Vickers microhardness and fracture toughness of this as-prepared transparent glass sample at room temperature reaches 7.3 ± 0.2 GPa and 2.0 ± 0.3MPa·m1/2, respectively. It is very interesting that these novel bulk transparent glasses exhibit ultraviolet photoluminescence (PL) properties at about ∼360 nm.

Electric-induced resistance switching (EIRS) effect based on transition metal (TM) oxides, such as perovskite manganites (Pr1-xCaxMnO3, La1-xCaxMnO3) and binary oxides (NiO, TiO2 and CoO) etc, has attracted great interest for potential applications in next generation nonvolatile memory known as resistance random access memory (RRAM). Compared with other nonvolatile memories, RRAM has several advantages, such as fast erasing times, high storage densities, and low operating consumption. Up to date, the switching mechanism, property improvement and new materials exploitation are still the hotspots in RRAM research.

In this report, the main results of resistance switching of two kinds of TM oxides including La0.7Ca0.3MnO3 and TiO2 were presented. Based on the I-V characteristics, the field-direction dependence of resistance switching (RS) behavior, and the conduction process analysis, the EIRS mechanisms were studied in detail. For the La0.7Ca0.3MnO3 film, the EIRS mechanism was related to the carrier injected space charge limited current (SCLC) conduction controlled by the traps existing at the interface between top electrode and La0.7Ca0.3MnO3 film. The RS behavior is produced by the trapping/detrapping process of carriers under different voltages. For the TiO2 film, both unipolar and bipolar RS behavior can be obtained in our experiments. The interface controlled filamentary mechanism was proposed to explain the unipolar EIRS in nanocrystalline TiO2 thin films, while the bipolar RS behavior may be related to the charge trapping or detrapping effect. In addition, it was confirmed that the I-V sweeps in vacuum environment, the applying of asymmetry pulse pairs and the oxygen annealing of films can improve the endurance of the EIRS devices. Our researches will provide some meaningful clues to understanding the EIRS mechanism and some useful pathways for the development of RRAM devices.

The microstructures and mechanical properties of Mg–6Zn–5Al–4Gd–1RE (RE = Ce or Y) alloys were investigated. The addition of Ce or Y obviously refines the grain size for the Mg–6Zn–5Al–4Gd-based alloy, while the Y element has a better refining effect. The Ce and Y show different grain-refining mechanisms: Ce addition mostly promotes the growth of secondary dendrite, while Y addition mainly increases the heterogeneous nucleation sites. The hardness-versus-aging time curves indicate that all the alloys have excellent aging-hardening behavior, but the response to maximum hardness was delayed by the Ce or Y addition. The microstructure observation of the peak-aged alloys indicated a large number of nanocrystalline τ-Mg32(Al, Zn)49 precipitates in the matrix. The Y addition is beneficial to improve the mechanical properties, and the alloy has optimal values. However, the Ce addition decreases the ultimate tensile strength and elongation of the alloy due to formation of a lot of shrinkage porosities.

Mg–8Gd–2Y–Nd–0.3Zn (wt%) alloy was prepared by the high pressure die-cast technique. The microstructure, mechanical properties in the temperature range from room temperature to 573 K, and strengthening mechanism were investigated. It was confirmed that the Mg–Gd-based alloy with high Gd content exhibited outstanding die-cast character. The die-cast alloy was mainly composed of small cellular equiaxed dendrites and the matrix. The long lamellar-shaped stacking compound of Mg3X (X: Gd, Y, Nd, and Zn) and polygon-shaped precipitate of Mg5RE (RE: Gd, Y, and Nd) were mainly concentrated along the dendrite boundaries. Meanwhile, it was demonstrated that the Zn addition affects the formation of non-equilibrium precipitate Mg3X. The ultimate tensile strength, yield strength, and Young’s modulus were 302 MPa, 267 MPa, and 38 GPa at room temperature, respectively. The outstanding mechanical properties were mainly attributed to the small dendrite spacing, wide skin region, and some dispersed precipitates in the alloy formed by the high-pressure die-cast technique. Designing a novel die-cast Mg alloy with good heat resistance without Al element is a significant accomplishment.

The electric-pulse–induced resistance switching of the Ag–La0.7Ca03MnO3(LCMO)–Pt heterostructures was studied. The multilevel resistance switching (MLRS), in which several resistance states can be obtained, was observed in the switching from high to low resistance state (HRS → LRS) by applying electric pulse with various pulse voltages. The threshold pulse voltages of MLRS are related to the initial resistance values as well as the switching directions. On the other hand, the resistance switching behavior from low to high resistance states (LRS → HRS) shows unobvious MLRS. According to the resistance switching behavior in serial and parallel modes, MLRS was explained by the parallel effect of multifilament forming/rupture in the Ag–LCMO interface layer. The present results suggest a possible application of Ag–LCMO–Pt heterostructures as multilevel memory devices.

Doped lead telluride dimensional nanocomposites were prepared by densifying nanocrystals synthesized employing an alkaline aqueous solution-phase reaction. The nanocrystal synthesis procedure resulted in high product yields of over 2 g per batch. These nanocrystals were then subjected to Spark Plasma Sintering (SPS) for densification. Transport properties were evaluated through temperature dependent resistivity, Hall, Seebeck coefficient, and thermal conductivity measurements. The results for these lead telluride nanocomposites were compared to bulk polycrystalline lead tellurides with similar carrier concentrations.

Resistance random access memory (RRAM) has attracted intense attention in recent years for the potential application as nonvolatile memory. One of the tempting properties of RRAM is the multi-level memory, in which several resistance states can be obtained and each of them can be used to save information. In this paper, the electric-pulse-induced multi-level resistance switching of the Ag-La0.7Ca03MnO3-Pt heterostructures was studied. The multi-level resistance switching (MLRS) was observed in the switching from high to low resistance state (HRS→LRS) by applying electric pulse with various pulse voltages. The threshold pulse voltages of MLRS are related to the initial resistance values as well as the switching directions. On the other hand, the resistance switching behavior from low to high resistance states (LRS→HRS) shows unobvious MLRS. MLRS was explained by the parallel effect of multi-filament forming/rupture in the Ag/La0.7Ca0.3MnO3 interface layer. The present results suggest a possible application of Ag-La0.7Ca03MnO3-Pt heterostructures as multi-level memory devices.

Nanostructured Ti5Si3–TiC–Ti3SiC2 and Ti5Si3–TiC composites were in situfabricated through the spark plasma sintering (SPS) technique using Ti and SiC powders as reactants. It was found that the composites could be prepared in arelatively short time (6 min at 1260 °C) above 98% theoretical density. The phase constituents and microstructures of the samples were analyzed by x-ray diffractionand observed by scanning electron microscopy. Transmission electron microscopywas used for detailed microstructural analysis. The results showed that the reaction products mainly consisted of Ti5Si3 and TiC phases or Ti5Si3, TiC and Ti3SiC2phases, depending on the molar ratio of reactants (Ti to SiC). The composites exhibited fine microstructure; TiC grain size was less than 200 nm. Fracturetoughness at room temperature was also measured by indentation tests.

We have measured growth rates and film properties for copper CVD using Cu(hfac)2 dissolved in isopropanol as the precursor delivery method. This approach offers the convenience and control associated with liquid precursor delivery, while avoiding the need to handle the precursor at its high melting point. The method provides similar growth rates to those observed using conventional delivery by solid sublimation, with the additional benefit that these growth rates are achieved using a much lower partial pressure of precursor in the reactor. The growth rate is nearly independent of the partial pressure of Cu(hfac)2, isopropanol, and H2 over the range of operating conditions examined. The film morphology and resistivity are also largely unaffected by the deposition conditions. These results strongly suggest that the mechanism proceeds via an adsorbed intermediate formed by the reaction of Cu(hfac)2 and isopropanol, and that the surface is nearly fully saturated by this intermediate.

A novel optical multilayer filter characterized by symmetrically stepwise graded refractive index profiles and high optical performance was designed. This 33-layer TiO2–SiO2 filter was fabricated by helicon plasma sputtering. The prepared filter exhibited a sharp cutoff reflection band around the central wavelength of 1340 nm and wide pass regions with high transmittance. These results correspond well with calculated estimations. Symmetrically stepwise graded refractive index profiles were demonstrated to effectively contribute to suppression of the sidelobes and to be potentially applicable in the design of other filters.