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Observation of Arsenic antisites (AsGa) in GaAs layers grown by molecular beam epitaxy (MBE) at low substrate temperatures (∼ 200°C) is reported, using electron paramagnetic resonance (EPR), magnetic circular dichroism in absorption (MCDA), and MCDA tagged by optically detected magnetic resonance (MCDA-ODMR). This experiment confirms that there is a MCD absorption band directly associated with AsGa in the GaAs layers. The AsGa concentration in the GaAs layers is found to decrease by about one order of magnitude after annealing at 600°C for two minutes.
This study evaluates variations in SiCl4 reactive ion etching (RIE) process parameters in order to optimize the fabrication of lateral quantum well arrays (QWA) used in III–V semiconductor laser and detector designs. Since fabrication involves MBE regrowth on SiCl4 etched surfaces, material quality of both the etched surface and GaAs regrowth are evaluated. The variation of RIE parameters involved power levels, DC bias and etch times (10 Watts, -30V, 8 min.; 25 Watts, -100V, 5 min.; 95 Watts,-340V, 2 min.) while material removal was held constant (400nm). Evaluation of the etched surfaces revealed that the lattice damage depth exceeded lOOnm for all power levels. The extent of disorder beneath the etched surface was less for the low power long etch time. Etching at higher power levels for shorter time periods resulted in smoother surfaces and enhanced electrical characteristics, which in turn yielded a higher quality GaAs regrowth region. For the RIE parameters examined in this study, the variation in defect densities seemed to have a lesser effect on device performance as compared to the extreme differences in surface morphologies. Thus, for the parameters evaluated in this work, we suggest that QWA fabrication is optimized via SiClif RIE at the high power level for a short time period.
One micron thick AlAs/GaAs structures have been deposited by molecular beam epitaxy onto high resistivity silicon substrates. Subsequent to deposition, it is shown that Excimer laser annealing up to 120mJ/cm2 at 248nm improves the GaAs mobility to approximately 2000cm2 /v-s. Dislocation density, however, did not decrease up to 180mJ/cm2 showing that improvement in transport properties may not be accompanied by an associated decrease in dislocation density at the GaAs/Si interface.
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