1 results
Reduction of incorporation of B, Al, Ti and N in 4H-SiC epitaxial-layer grown by chemical vapor deposition at higher growth temperature
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 680 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, E3.9
- Print publication:
- 2001
-
- Article
- Export citation