Atomically sharpened tips have attracted much interest in the imaging and manufacturing fields due to their high spatial resolutions. Typically, tungsten (W) is mainly used as the material of such a tip, but when the W tip is used in an oxygen environment, a limit is revealed due to corrosiveness stemming from a reaction with the oxygen gas. To solve this problem, methods of depositing a metal on W that does not react with oxygen have been studied. In this study, we introduce a method of depositing iridium (Ir) directly onto an insulating layer without an additional pretreatment to remove the insulating layer remaining on the W surface, forming an Ir-nanopyramid structure at the apex of the W tip by field evaporation and faceting. Field ion microscopy and atom probe tomography were used to analyze the crystal structure and composition at the apex during the faceting process, and the overall tip shape change after faceting was compared and analyzed with transmission electron microscopy. The proposed method does not have a tip heating step when creating an atomically sharp tip such that it can be made easily with a simpler equipment configuration than in the existing method.

There has been a significant effort to create spiral sensors by changing either the periodic d-spacing of the structure or the dielectric constants of the materials by combining the multi-faceted environmental responsiveness of polymer hydrogels with dielectrical structures.1 Reversible spiral switches with dimensional functionalities that respond to chemical environment were constructed. When the spiral photonic actuator was swollen in hydrophilic acetic acid, right-handed spiral structures are formed, while the spiral photonic actuator was swollen in hydrophobic hexane, left-handed spiral structures are formed. All actuators returned back to the transparent planar state after deswelling processes. These reversible spiral photonic actuators can be applied in the application of mechanical actuators, electrical devices, and optical components.

A novel route to organic-inorganic composites was described based on biomineralization of poly(ethylene glycol) (PEG)-based hydrogels. The 3-dimensional hydrogels were synthesized by radical crosslinking polymerization of poly(ethylene glycol fumarate) (PEGF) in the presence of ethylene glycol methacrylate phosphate (EGMP) as an apatite-nuclating monomer, acrylamide (AAm) as a composition-modulating comonomer, and potassium persulfate (PPS) as a radical initiator. We used the urea-mediated solution precipitation technique for biomineralization of hydrogels. The apatite grown on the surface and interior of the hydrogel was similar to biological apatites in the composition and crystalline structure. Powder x-ray diffraction (XRD) showed that the calcium phosphate crystalline platelets on hydrogels are preferentially aligned along the crystallographic c-axis direction. Inductively-coupled plasma mass spectroscopy (ICP-MS) analysis showed that the Ca/P molar ratio of apatites grown on the hydrogel template was found to be 1.60, which is identical to that of natural bones. In vitro cell experiments showed that the cell adhesion/proliferation on the mineralized hydrogel was more pronounced than on the pure polymer hydrogel.

We report the catalyst-free synthesis of ZnO nanobranches on Si nanowires using metalorganic chemical vapor deposition. The formation of single-crystalline ZnO nanobranches on Si nanowire backbones has been confirmed by lattice resolved transmission electron microscopy. Depending on the growth parameters, especially the growth temperature, the morphology and size of the ZnO nanobranches evolved from nanothorn-shaped (at 350 °C) to nanoneedle-shaped structures (at 500 °C). When the growth temperature was further increased to 800 °C, thin ZnO nanowire branches grew out of the Si nanowire backbones coated with thin ZnO shells, whereas no ZnO branch was formed on bare Si nanowires due to limited nucleation. The growth behavior was further exploited to fabricate ZnO/Si nanowire networks by growing the ZnO nanowires selectively on laterally aligned Si–ZnO core-shell nanowire arrays. In addition, cathodoluminescent properties of ZnO nanobranches on Si nanowire backbones are discussed with respect to position and size.

System in package (SiP) is a superb candidate to enhance the area efficiency and performance of electronic packaging. Here, recent work on stacked chip type 3D SiP with vertically interconnected through hole vias are reported. The process includes; formation of 50um-diameter via holes, conformal deposition of SiO2 dielectric layer, deposition of Ta and Cu barrier layers, via filling by Cu electroplating, Cu/Sn bump formation for multi-chip stacking, and finally chip-to-PCB bonding using Sn-3.0Ag-0.5Cu solder and ENIG pad. A prototype 3D SiP stacked up to 10 layers was successfully fabricated.

A high frequency electrical model of the through hole via was proposed and the model parameters were extracted from measured S-parameters. The proposed model was verified by TDR/TDT (time domain reflectometry/time domain transmission) and eye-diagram measurement. Contact resistances of Cu via and bump joint were presented.

The thermal degradation behavior of indium tin oxide (ITO) thin films coated on glass substrates using radio frequency (rf) magnetron sputtering was investigated over the temperature range of 100–400 °C in air. The resistivity of ITO films increases abruptly after the thermal degradation temperature of 250 °C is reached, with a slight increase from 200 to 250 °C. The x-ray photoelectron spectrometry intensity ratio of O/(In + Sn) in thermally degraded ITO films is higher than that in normal films. The carrier concentration gradually decreases up to 200 °C, sharply drops between 200 and 250 °C with increasing temperature, and then saturates from 275 °C. The Hall mobility drops suddenly at 275 °C. The diffusion of oxygen into oxygen interstitials and oxygen vacancies and the chemisorption of oxygen into grain boundaries decrease the carrier concentration and the Hall mobility, respectively. The former mainly affects the resistivity of ITO films below 250 °C, and the later above 250 °C.

NiCr films were thermally evaporated on the Mn-Ni-Co-O thick-film substrates. The NiCr/Mn-Ni-Co-O bi-layer systems were tested in a thermal shock chamber with three temperature differences of 150, 175 and 200°C. The systems were considered to have failed when the sheet resistance of NiCr films changed by 30% relative to an initial value. As the cyclic repetition of thermal shock increased, the sheet resistance of NiCr coatings increased. The Coffin-Manson equation was applied to the failure mechanism of cracking of NiCr coatings and the SEM observation of cracks and delamination in NiCr coatings due to thermal cycling agreed well with the failure mechanism.

CMP(Chemical Mechanical Planarization) process is widely used to reduce step height in semiconductor fabrication processes. As a design rule shrinks, a highly planar surface becomes inevitable within wafer scales. In order to get a high degree of a planarization, self-stopping characteristics of a ceria-based slurry should be studied and used in semiconductor process. In this study, threshold polishing pressure for a self-stopping characteristics was obtained by optimizing down pressure, pad conditioning, and mixing ratio of ceria abrasive and additive. A series of experiments were made to optimize the threshold polishing pressure in variable line & space patterns that consist of 0.8um step height and unit oxide film. As a result, self-stopping cmp process is twice batter than conventional silica-based process with respect to planarity and WIWNU. In addition, WIWNU and step height was dramatically decreased to less than 1000Å when applying to real fabrication devices over 2um step height.

The morphology evolution of thin films was studied by molecular dynamics simulation. In this simulation four deposition and substrate elements combinations were used: Al on Al(001), Al on Co(001), Co on Co(001), Co on Al(001). The Al thin film was always grown by layer-bylayer mode regardless of substrates used. On the other hand, thin films formed by Co deposition depended on substrates used.While Co thin films on the Co substrates were grown by the island mode, a 3 monolayer (ML) thickness of CoAl surface compound was initially formed on Al substrate, before pure Co thin film growth occurred. In addition to the study on morphologies, the degrees of mixing of atoms in the interface were studied quantitatively. No surface mixing and a sharp interface were observed when Co was used as a substrate regardless of deposited atoms. On the contrary, a large amount of surface mixing or compound formation was observed when Al was used as a substrate.

The effects of anisotropic dielectric properties of ferroelectric Ba1-xSrxTiO3 (BST) films on the characteristics of phase shifter have been studied in microwave regions at room temperature. Ferroelectric BST films with (001) and (011) orientation were epitaxially grown on (001) and (011) MgO substrates, respectively, by pulsed laser deposition method. The structures of BST films were investigated using x-ray diffraction measurement. The microwave properties of orientation engineered BST films were investigated using coplanar waveguide transmission lines that were fabricated on BST films using a thick metal layer by photolithography and etching process. The measured differential phase shift and insertion loss (S21) for (011) BST films are larger than those for (001) BST films. Dielectric constants of the ferroelectric BST films are calculated from the measured S21 using a modified conformal-mapping model.

The ferroelectric (Ba0.6Sr0.4)TiO3 (BST) films were prepared on (001) MgO single crystals by pulsed laser deposition. Coplanar waveguide (CPW) type phase shifters controlled by external dc bias field were fabricated on BST films using a 2 μm thick metal layer to reduce metal loss. Microwave properties of the CPW phase shifter were measured using a HP 8510C vector network analyzer from 0.1 – 20 GHz. The fabricated CPW phase shifters (8 mm long) exhibited differential phase angle of 100 ° at 10 GHz with a dc bias field of less than 80 kV/cm between center and ground conductors. Furthermore, a stable differential phase angle (102 ± 3.5 o) was observed from another CPW while changing the power of incident microwave from -10 to +30 dBm. Gap size dependent dielectric constant of the BST film was observed and a simple correction method was suggested in the paper. These results demonstrate the possible application of ferroelectric tunable devices on a high power tunable wireless telecommunication.

Pt/Sr0.85Bi2.4Ta2O9/TiO2/Si structures were prepared with variation of the Sr0.85Bi2.4Ta2O9 (SBT) film thickness for MFIS-FET applications. After depositing TiO2 film of 10 nm thickness by reactive sputtering on Si(100) substrate as a buffer layer, SBT thin film of 210-400 nm thickness was prepared onto it by metal organic decomposition process. Regardless of the SBT film thickness, the Pt/SBT/TiO2/Si structures exhibited clockwise directional hysteresis, indicating well-defined ferroelectric switching behavior of the SBT films. While the memory window of the Pt/SBT/TiO2/Si MFIS structures increased with increasing the SBT film thickness, the maximum capacitance of the Pt/SBT/TiO2/Si MFIS structures decreased with increasing the SBT film thickness. The Pt/SBT(400 nm)/TiO2(10 nm)/Si structure exhibited a memory window of 1.3 V at ±5 V.

Due to growth tensile stress, which evolves in diamond films during deposition, thick diamond films are easily cracked. In this study we successfully prevented growth cracks by introducing thermal compressive stress with step-down control of deposition temperatures during growth. Three deposition temperature drops of 10 °C each during deposition enabled us to successfully synthesize crack-free four-inch diamond wafers several hundred micrometers in thickness. This method is very simple and may be applicable to coating of films of various materials different from those of substrates.

The deposition area of diamond film is increased by applying a geometry of multiple cathodes and a single anode in direct current (dc) plasma assisted chemical vapor deposition (PACVD). Each cathode is made of Ta and connected independently to its own dc power supply. The operating pressure is 1.3 × 104 Pa (100 Torr), and methane-hydrogen mixed gas is used as reaction gas. The voltage and the current applied to each cathode are 650 V and 4 A, respectively. The transition from a diffuse glow to an arc is prevented by maintaining cathode temperatures above 2000 °C, which inhibits carbon deposition on the cathodes. Translucent diamond film of 3 in. diameter, thicker than 200 μm, is grown using seven cathodes with 3% CH4–H2 mixed gas for 110 h. The deposition area can be increased further by increasing the number of cathodes.

Elastic modulus and Poisson's ratio of diamond-like carbon (DLC) film was measured by a simple method using DLC bridges which are free from mechanical constraint of substrate. The DLC films were deposited on Si wafer by C6H6r.f. glow discharge at the deposition pressure 1.33 Pa. Because of the high residual compressive stress of the film, the bridge exhibited a sinusoidal displacement by removing the constraint of the substrate. By measuring the amplitude with known bridge length, we could determine the strain of the film required to adhere to the substrate. Combined with independent stress measurement by laser reflection method, this method allows calculation of the biaxial elastic modulus, E/(1–v), where E is the elastic modulus and v Poisson's ratio of the DLC film. By comparing the biaxial elastic modulus with plane-strain modulus, E/(1–v2), measured by nano-indentation, we could further determine the elastic modulus and Poisson's ratio, independently. The elastic modulus, E, increased from 87 to 133 GPa as the negative bias voltage increased from 400 to 550 V. Poisson's ratio was estimated to be about 0.20 in this bias voltage range. For the negative bias voltages less than 400 V, however, the present method resulted in negative Poisson's ratio which is physically impossible. The limitation of the present method was also discussed.

Ferroelectric BaTiO 3 thin films with perovskite structure were grown by sol-gel spin-on processing onto (111)Pt/Ti/SiO2/Si substrates. In order to investigate the effects of space charge in BaTiO3 thin films, we measured the relative dielectric constant and the ac conductivity of the films as a function of frequency, ac oscillation amplitude and temperature. Dielectric constant and dielectric loss were 147 and 0.03 at 100 kHz, respectively. Also, BaTiO3 thin films exhibited marked dielectric relaxation above the Curie temperature and in the low frequency region below 100 Hz. This low frequency dielectric relaxation is attributed to the ionized space charge carriers such as oxygen vacancies and defects in BaTiO3 film and the interfaical polarization. The thermal activation energy for the relaxation process of the ionized space charge carriers was 0.72 eV.

A simple method to measure the elastic modulus and Poisson's ratio of diamond-like carbon (DLC) films deposited on Si wafer was suggested. This method involved etching a side of Si substrate using the DLC film as an etching mask. The edge of DLC overhang free from constraint of Si substrate exhibited periodic sinusoidal shape. By measuring the amplitude and the wavelength of the sinusoidal edge, we can determine the strain of the film required to adhere to the substrate. Combined with independent stress measurement by laser reflection method, this method allows calculation of the biaxial elastic modulus, E/(1 − v), where E is the elastic modulus and v Poisson's ratio of the DLC films. By comparing the biaxial elastic modulus with plane-strain modulus, E/(1 −v2), measured by nano-indentation, we could further determine the elastic modulus and Poisson's ratio, independently. This method was employed to measure the mechanical properties of DLC films deposited by C6H6 r.f. glow discharge at the deposition pressure 1.33 Pa. The elastic modulus, E, increased from 94 to 128 GPa as the negative bias voltage increased from 400 to 550 V. Poisson's ratio was estimated to be about 0.22 in this bias voltage range. For the negative bias voltages less than 400 V, however, the present method resulted in negative Poisson's ratio. The limitation of the present method was discussed.