In this study, we fabricated Mg2Si from metal Mg and Si with different particle sizes (425 - 300, 300 - 180, and 75 μm or less) using spark plasma sintering (SPS) equipment. Additionally, the Mg2Si formation was investigated. A sieved Si powder was mixed with metal Mg powder in an inert gas (Ar) atmosphere. The mixture was placed in a graphite die while still in an Ar atmosphere and subjected to SPS at 923 K and 1113 K. The obtained sintering bodies were Mg2Si particles with a size of about 5 μm. Then, the sintered bodies were evaluated by X-ray diffraction (XRD). As a result, it was confirmed that generation of Mg2Si increased with decreasing Si particle size.

Mg2Si bulk was fabricated by spark plasma sintering (SPS) nano-powder, and the thermoelectric characteristics of the bulk sample were evaluated at temperatures up to 873 K. A pre-synthesized all-molten commercial polycrystalline Mg2Si source (un-doped n-type semiconductor) was pulverized into powder of 75 μm or less. To obtain nano-sized fine powder, the powder was milled using planetary ball mill equipment under an inert atmosphere. Fine Mg2Si nano-powder with a mean grain size of about 500 nm was obtained. XRD analysis confirmed that no MgO existed in the nano-powder. The fine powder was put in a graphite die to obtain a sintering body of Mg2Si and treated by SPS under vacuum conditions. The resulting Mg2Si bulk had high density and did not crack. However, the XRD analysis revealed a small amount of MgO in it. The thermoelectric properties (electrical conductivity, Seebeck coefficient, and thermal conductivity) were measured from room temperature to 873 K. The microstructure of the sintered body was observed by scanning electron microscopy. The maximum dimensionless figure of merit of a sample made from Mg2Si nano-powder was ZT = 0.67 at 873 K.