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1 results

  • Interplay Between Copper Electroplating and Chemical Mechanical Planarization

  • David K. Watts, Yusuke Chikamori, Tatsuya Kohama, Norio Kimura, Koji Mishima, Akihisa Hongo
  • Journal:
    MRS Online Proceedings Library Archive / Volume 671 / 2001
    Published online by Cambridge University Press:
    18 March 2011, M3.1
    Print publication:
    2001

  • The introduction of Chemical Mechanical Polishing (CMP) into semiconductor device processing brought a significant need for wet chemistry research and development in this industry. With the transition from aluminum to copper for advanced interconnect metallization came a tremendous amount of electrochemical research and process development towards a production worthy copper CMP process capable of meeting the stringent specifications of dual damascene integration.In addition, the dual damascene integration scheme introduced copper deposition challenges that brought significant activity in developing another wet chemistry process, electroplating. These two sequential, chemical processes have been shown to have significant interaction that has created significant challenges in process integration.