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A thin metal film with nano-apertures, called “nano-mesh electrode,” generates near-field lights near the electrode. We investigated carrier excitations in semiconductors by the near-field light. Finite-difference time-domain (FDTD) method revealed that when the infrared light irradiates the Au nano-mesh electrode on Ge, near-field lights are generated and absorbed in the surface region of the Ge. In order to measure the photocurrent involved by near-filed lights, we fabricated a Schottky cell and applied a Au nano-mesh electrode on the n-type Ge. The efficiency of the Schottky cell with the Au nano-mesh electrode improved in infrared region compared to plain the Au-film Schottky cell. The agreement between theoretical simulations and experiments indicates that near-field lights enhance the carrier excitation in the semiconductor.
We developed a new method for easy fabrication of micrometer-scale fine metal patterns on substrates. The patterns can be fabricated at low cost, at low processing temperature, and on uneven substrates as well as on plane surfaces. The method involves, first, forming hydrophilic and hydrophobic patterns on the substrates, and, second, depositing metal by electroless plating on the hydrophilic area. Hydrophilic and hydrophobic patterns were formed on a sensitizer containing naphthoquinonediazide (NQD) units coated on the substrates by the exposure. In the exposed areas, metal particles that are catalysts for electroless copper plating were adsorbed in the ion-exchange reaction and then the reduction treatment was performed. Copper was selectively deposited by the self-catalyst mechanism, according to the exposed patterns. All experimental processes can be carried out at room temperature. Using this new method, copper line patterns of 25 μm and copper dot patterns of 15 μm diameter were fabricated on the substrate.
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