To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure email@example.com
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
We present x-ray diffraction based methods to quantitatively determine the wurtzite content of nanowire ensembles and to investigate the effect of twinning. An increased lattice constant in growth direction is found for all investigated InAs and InP nanowire samples. This increase is independent of the wurtzite content. Using x-ray pole figures we find that twinning is present in GaAs/Si branched nanowires, which leads to 60° rotations of the lattice.
We describe the production of hierarchical branched nanowire structures by the sequential seeding of multiple wire generations with metal nanoparticles. Such complex structures represent the next step in the study of functional nanowires, as they increase the potential functionality of nanostructures produced in a self-assembled way. It is possible, for example, to fabricate a variety of active heterostructure segments with different compositions and diameters within a single connected structure. The focus of this work is on epitaxial III-V semiconductor branched nanowire structures, with the two materials GaP and In As used as typical examples of branched structures with cubic (zinc blende) and hexagonal (wurtzite) crystal structures. The general morphology of these structures will be described, as well as the relationship between morphology and crystal structure.
Nanometer-sized particles of W are of interest in semiconductor device research, where such particles may store electrons inside heteroepitaxially defined structures. In this paper, we present results concerning W particles produced by thermal decomposition of tungsten hexacarbonyl. By the described method, it was possible to produce size-selected, single-crystalline W particles in the size range between 15 and 60 nm. The sintering behavior of the particles was studied between ambient temperatures and 1900 °C. The particle morphology and structure were examined with high-resolution transmission electron microscopy and electron diffraction techniques. Particles sintered at the highest temperatures typically were single crystals, with well-developed facets. Some problems concerning a yield reducing charging mechanism are discussed.
A new process, named Aerotaxy, has been developed for growth of quantum dots (QDs) with identical sizes and properties. Self-assembly and intrinsic control of the nanocrystal properties is obtained by (i) an initial selection of spherical droplets of gallium (Ga), all having identical sizes within a few %, employing standard aerosol technology. In a second processing stage (ii) these droplets of gallium are allowed to react with arsine (AsH3), by which the metallic Ga droplets are completely converted into a monodisperse ensemble of galliumarsenide (GaAs) nanocrystals at temperatures as low as 260°C. GaAs nanocrystals, of approximate diameter 10 nm, have been produced and deposited on various substrates. The good crystallinity and stoichiometry of the formed particles are confirmed by transmission electron microscopy studies of individual nanocrystals.
Email your librarian or administrator to recommend adding this to your organisation's collection.