Background: Mortality associated with depression may be influenced by severity of depression and gender. We investigated the differential impacts on all-cause mortality of late-life depression by the type of depression (major depressive disorder, MDD; minor depressive disorder, MnDD; subsyndromal depression, SSD) and gender after adjusting comorbid conditions in the randomly sampled elderly.

Methods: One thousand community-dwelling elderly individuals were enrolled. Standardized face-to-face clinical interviews, neurological examination, and physical examination were conducted to diagnose depressive disorders and comorbid cognitive disorders. Depressive disorders were diagnosed according to the Diagnostic and Statistical Manual of Mental Disorders-IV (DSM-IV) criteria and SSD to study-specific operational criteria. Five-year survivals were compared between groups using Cox proportional hazards models.

Results: By the end of 2010, 174 subjects (17.4%) died. Depressive disorder (p = 0.001) and its interaction term with gender (p < 0.001) were significant in predicting five-year survival. MDD was an independent risk factor for mortality in men (hazard ratio = 3.65, 95% confidence interval = 1.67–7.96) whereas MnDD and SSD were not when other risk factors were adjusted.

Conclusions: MDD may directly confer the risk of mortality in elderly men whereas non-major depression may be just an indicator of increased mortality in both genders.

Background: The influences of demographics, culture, language, and environmental changes on Mini-Mental State Examination (MMSE) scores are considerable.

Methods: Using a sample of 7452 healthy, community-dwelling elderly Koreans, aged 55 to 94 years, who participated in the four ongoing geriatric cohorts in Korea, we investigated demographic influences on MMSE scores and derived normative data for this population. Geropsychiatrists strictly excluded subjects with cognitive disorders according to the protocol of the Korean version of the Consortium to Establish a Registry for Alzheimer's Disease Assessment Packet (CERAD-K) Clinical Assessment Battery (CERAD-K-C).

Results: Education (standardized β = 0.463), age (standardized β = −0.303), and gender (standardized β = −0.057) had significant effects on MMSE scores (p < 0.001). The score of MMSE increase 0.379 point per 1-year education, decrease 0.188 per 1-year older, and decrease 0.491 in women compared to men. Education explained 30.4% of the scores’ total variance, which was much larger than the variances explained by age (8.4%) or gender (0.3%). Accordingly, we present normative data for the MMSE stratified by education (0, 1–3, 4–6, 7–9, 10–12, and ≥ 13 years), age (60–69, 70–79, and 80–89 years), and gender.

Conclusions: We provide contemporary education-, age-, and gender-stratified norms for the MMSE, derived from a large, community-dwelling elderly Korean population sample, which could be useful in evaluating individual MMSE scores.

Background: This study investigates discrepancies between the confidence expressed by Korean elders in their balance and their actual physical performances according to sex and age. It also attempts to identify the factors responsible for such gaps or discrepancies.

Methods: The Korean Longitudinal Study on Health and Aging (KLoSHA) was designed as a population-based prospective cohort study on the health and aging of Korean adults aged 65 years and over. We evaluated 1000 of 1118 randomly selected subjects in terms of activities-specific balance confidence (ABC) and performance in regard to balance and gait (POMA). Activities of daily living (ADL) and instrumental activities of daily living (IADL) were assessed to measure disability. Pain-related dysfunctions, depression and cognitive functions were assessed. Next, we assessed the relationship between balance confidence and physical performance and functioning by sex and age.

Results: The balance confidence of elderly women was lower than that of elderly men, although the physical performances of men and women under the age of 80 were similar. Women showed increased functional disability related to lower extremity pain and closely associated with balance confidence. However, psychological variables such as depression and cognitive functioning did not affect balance confidence.

Conclusion: We found a discrepancy between balance confidence and physical performance according to sex and age among Koreans elders. Low balance confidence among women elders was correlated with pain-related dysfunctions other than those reflected in POMA scores. Therefore, enhancing confidence and controlling pain as a means of preventing disability should be emphasized when developing models for maintaining and promoting health in elders.

Conventional Ge2Sb2Te5 (GST) was modified by adding up a small amount of SiOx, using co-sputtering technique from multiple targets. The SiOx content was gradually increased by increasing the power applied to SiOx target, up to 8 volume percent. The sheet resistance of SiOx-containing GST exponentially increased, when the room-temperature-deposited samples were annealed at 300 °C. Transmission electron microscopy images revealed that no SiOx particulates were formed, which was confirmed by Gattan image filtering. It was indicated by x-ray diffraction patterns that the grain size of SiOx-containing GST is smaller than normal GST with lattice locally distorted at its crystalline state, suggesting that molecular SiOx is homogeneously distributed throughout the GST matrix. We observed that the crystallization temperature of SiOx-containing GST is gradually elevated by increasing the SiOx content, while the melting point decreased. These observations led to the reset current reduction, which is a critical requirement for the high density PRAM.

In this study, we investigated the effects of the addition of CF4, Cl2, and N2 gases to oxygen electron cyclotron resonance (ECR) plasma on the reactive ion etching (RIE) properties of RuO2 film such as etch rate, selectivity, and etched profile. The concentration of the etching species in the plasma was analyzed with an optical emission spectroscopy (OES) and a quadrupole mass spectrometer (QMS). The etch product was also examined with QMS.

The addition of a small amount of CF4, Cl2, or N2 to the O2 plasma increases the concentration of oxygen radicals and accordingly increases the etch rate of the RUO2 films appreciably. The etch rate of the RuO2 film was enhanced more with the addition of a small amount of CF4 and CI2 than with the addition of N2. On the contrary, the etched profile obtained in O2/N2 plasma was superior, without any damaged layer at the sidewall, to O2/CF4 and O2/Cl2 plasma. The selectivity of RuO2 to Si)2 mask was over 20:1 for each of the additive gas proportion at which the etch rate was maximum for each plasma system.

The influence of ion bombardment on the mechanical stress and microstructure of sputtered silicon nitride (SiNx) films has been systematically investigated. Applied substrate bias voltage was used to control the bombardment energy in a radio frequency (rf) reactive magnetron sputtering system. The resultant films were characterized by transmission electron microscopy (TEM), atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FT-IR), Rutherford backscattering spectrometry (RBS), stress and chemical etch rate measurements. As the bias voltage was increased, the internal stress in SiNx films became increasingly compressive and reached a value of about 18.3 × 109 dyne/cm2 at higher bias voltages. These correlated well with the transition of the film microstructure from a porous microcolumnar structure containing large void to the more densely packed one. The obtained results can be explained in terms of atomic peening by energetic particles, leading to densification of the microstructure. It was also found that the amount of argon incorporated in the film is increased with increasing bias voltage, whereas the oxygen content is decreased. The lowest etch rate in buffered HF solution, approximately 1.2 Å/sec, was observed with the application of a substrate bias of -50 V.