Wildlife populations on Amami Island, Japan, have been affected by forest clear-felling and the introduction of alien species, in particular the mongoose Herpestes auropunctatus. We used monitoring data collected over 24 years to track changes in the population sizes of five species of mammals and 20 species of birds. We assigned species to the following groups: indigenous, rare, insectivorous, negatively affected by forest clear-cutting, and negatively affected by mongoose invasion. We examined trends in each group at four time points between 1985 and 2010 using two methods: species abundance estimates and the Living Planet Index. We then assessed the usefulness of these methods as tools for conservation planning. Inspecting species individually we identified four main patterns of abundance change: (a) an increase from the first to the last census period, (b) an increase in all periods except 2009–2010, (c) a decrease from 1985–1986 to 2001–2002 but an increase in 2009–2010, and (d) a decrease in all census periods. We observed certain relationships between these patterns and the species groups assigned as above. According to the Living Planet Index the group negatively affected by forest clear-cutting did not show significant recovery and the groups of rare species and species negatively affected by mongoose recovered to c. 40% of the original level after a sharp decline during 1985–2002. The Living Planet Index is a more useful tool for assessing the urgency of particular conservation needs, although limited information on species abundance reduces its representativeness for some groups.

Raman scattering spectra and ferroelectric properties of epitaxial tetragonal Pb(Zr, Ti)O3 were investigated for polar axis-oriented thin films with various Zr/(Zr + Ti) ratios and by changing the ratios from 0 to 0.50 at different measurement temperatures. The chosen films in the thickness range of 1–2 μm present the advantage of showing small residual strain. The E (TO) modes were successfully isolated using cross-polarization configurations, while A1 (TO) and B1 modes were activated using parallel polarization configurations. Systematic changes in Raman peak positions were observed with changes in the Zr/(Zr + Ti) ratios at different measurement temperatures. It was found in both cases that the tetragonal distortion (c/a-1) and the value of square of spontaneous polarization (Ps2) linearly increased with increasing ω2[A1(1TO)], where a and c are the lattice parameters of a and c-axes. This indicates that monitoring A1(1TO) mode is efficient as a characterization method of ferroelectricity. It can also be used as a novel nondestructive process check or reliability assessment technique during fabrication of microelectromechanical systems (MEMS) using piezoelectric materials.

Field electron emission model of hydrogen-terminated n-type diamond was discussed. Ultra-violet photoelectron spectroscopy characterizations indicated that the electron affinity was -0.7 eV and an internal barrier of about 3.5 eV existed on the surface. Field electron emission properties depended on anode-diamond distances. Schottky barrier lowering model suggested that this internal barrier was lowered by the electric field (5.4x106 V/cm) applied onto the negative electron affinity surface of the H-terminated n-type diamond.

We evaluated the effects of the edge degradation of diamonds in terms of their cutting ability from the viewpoint of mechanical, chemical and chemical-mechanical wear in chemical-mechanical polishing (CMP) systems for high-volume manufacturing. The results showed that both micro-chipping on the cutting edges of diamonds caused by a mechanical shock test and the rounding off of the sharp edges of diamonds in a marathon wear test degraded the pad cut rate, while no adverse effects on the cutting ability were observed during an acidic slurry immersion test. We also examined in situ coefficient of friction (COF) monitoring for use in identifying the tribology of the pad conditioning. Furthermore, we demonstrated the usefulness of measuring the height ratio of the asperity called “top surface area (TSA) ratio” as an appropriate topographical parameter to study the dependence of COF during conditioning on the decay of the tungsten removal rate. We presented a clear correlation between the pad cut rate degradation and the TSA ratio after CMP in order to elucidate an increase in the conditioning COF related to truncation of the asperity tip by wear and plastic deformation.

In this paper, we measured the field emission properties of reconstructed P-doped diamond under various anode-diamond distances and compared with the oxidized surface. Voltage drops in the vacuum was estimated to be 4.95 and 26.6 V/μm for the reconstructed and the oxidized, respectively. Moreover, we calculated the barrier height ratio between each surface. Our data indicates the changes in electron affinity strongly affect on the field emission properties.

Electric field of less than 5 V/um is enough to extract electrons from CVD diamond, whereas field of one to two orders of magnitude higher is needed to extract electrons from metal emitter tips. Diamond has various advantages as an electron emitter in addition to the low-threshold voltage, negative electron affinity (NEA), high thermal conductivity, and high chemical stability. The difficulty in clarification of electron emission mechanism is the factor preventing diamond from being used in practical Quite a few numbers of possible mechanisms have been proposed based on conventional emission current-anode voltage (I-V) characteristics, however, difficulty remained in the determination of origin for emitting electrons. In our previous study, we have succeeded in determining the origin for lightly nitrogen (N)-doped CVD diamond by using combined x-ray photoemission spectroscopy / ultraviolet photoemission spectroscopy / field emission spectroscopy (XPS/UPS/FES) system. The origin at 1.47 eV above valence band maximum (VBM) was consistent with donor level for aggregated N. The origin was at VBM for natural IIb diamond measured as a reference, indicating the emitted electrons strongly depend on the dopant In this study, the origin of emitting electrons for heavily N-doped CVD diamond was characterized by the means of combined XPS/UPS/FES. Extremely low-threshold electron emission at 0.5 V/um is still one of the lowest threshold voltages. Such a low-threshold emission may be possible if electrons are somehow injected to conduction band of diamond and emitted into vacuum through NEA surface. Hence, we strongly believe the determination of the origin for heavily N-doped CVD diamond leads to the clarification of mechanism for low-threshold electron emission from diamond. The system in which we have developed for this study consists of ultraviolet source built in an X-ray photoelectron spectrometer. The diamond sample could be negatively biased up to 4kV relative to the mesh grid for FES. Individual spectroscopy of XPS was performed prior to the combined spectroscopy to determine any possible contaminants on CVD diamond. Peaks referred to C1s and O1s of diamond were observed in addition to Gold, used in a mesh grid set above the sample. Combined spectroscopy of UPS/FES was then, conducted on the CVD diamond to identify the origin of field emitted electrons. The diamond was first illuminated by He I excitation for photoemission. NEA with the typical spectra shape for diamond was observed. After confirming stable operation of individual UPS, negative voltage was applied simultaneously for field emission. Exceeding threshold voltage, a sharp peak, which can be referred to field-emitted electrons appeared in addition to typical UPS spectra. The origin of emitting electrons as well as its dependence on the applied voltage will be discussed.

Electric field of less than 5 V/μm is enough to extract electrons from diamond, whereas field of one to two orders of magnitude higher is needed to extract electrons from metal emitter tips. Despite such low-threshold field, the difficulty in clarification of electron emission mechanism is the factor preventing diamond from being used in a practical use. Quite a few numbers of possible mechanisms were proposed to better understand the origin and properties of the observed emission. Most of these mechanisms were, however, based on the conventional I (Emission current)-V (Anode voltage) characteristics. Energy distribution of the field-emitted electrons is essential in direct clarification of the mechanism. In this study, combined XPS/UPS/FES system was used to characterize the electron emission mechanism of doped chemical vapor deposited (CVD) diamond. The results indicated successful observation of the origin of field-emitted electrons from doped CVD diamond comparison with natural diamond, used as a reference.

Diamond has various advantages as an electron emitter in addition to the low-threshold voltage, negative electron affinity (NEA), high thermal conductivity, high mechanical hardness, and high chemical stability. The difficulty in clarification of electron emission mechanism is preventing diamond from being used in the practical use. It is extremely difficult to identify the surface potential of the emitting diamond from conventional Emission current (I)- Anode voltage (V) characteristics. If one could measure the potential of the emitting surface, the band diagram of emitting diamond can be completed. The combined spectroscopy of XPS/UPS/FES specially built for this study, is one of the most powerful tool, which could identify the potential of the emitting surface. In this study, we have succeeded in observing the origin of field-emitted electrons using our combined XPS/UPS/FES system.

ZnO films were grown by radical-source molecular beam epitaxy (RS-MBE) on sapphire and glass substrates, and they were characterized in terms of Hall mobility and optical transmission. Undoped ZnO films exhibit a low intrinsic defect density and optical properties close to bulk ZnO. By Ga doping, a resistance ρ as low as 2×10−4 Ωcm could be achieved. Balancing high conductivity and low transmission losses due to free carrier absorption in the infrared, the optimum was obtained for ρ=3.4×10−4Ωcm, electron mobility μe=37 cm2/Vs and an average transmission T of 96% in the wavelength range 400-1100 nm. Polycrystalline growth on glass yields slightly reduced but still good film quality (μe=30 cm2/Vs, T=90%). By the incorporation of Mg, conducting Mg0.3Zn0.7O films with an increased band gap up to ∼ 4eV were realized.

ZnO films were grown directly on epitaxial CuInSe2 (001) (CIS) by radical-source molecular beam epitaxy (RS-MBE). The substrate-film interdiffusion was investigated dependent on the ZnO growth temperature. Secondary Ion Mass Spectroscopy (SIMS) profiles indicate the mutual temperature-activated diffusion of Zn and In at a growth temperature of 440°C which is absent at 250°C. Zn indiffusion into the CIS substrate leads to characteristic changes in the photoluminescence (PL) properties, whereas the In outdiffusion into the growing ZnO film causes an increased carrier concentration.

The Amami rabbit Pentalagus furnessi is a rare forest-dwelling form endemic to the Amami and Tokuno Islands in Japan. In order to estimate the distribution and abundance of the Amami rabbit we counted their faecal pellets along forest roads and streams as well as within the forests on Amami and Tokuno Islands during January 1993–March 1995. The number of pellets/ km along a stream gave a practical index for measuring relative abundance. The rabbit was estimated to be distributed over about 370 sq km on Amami Island and 33 sq km on Tokuno Island. There was a large variance in faecal abundance among the survey routes. Some populations were completely isolated and thought to be very small. The size of a local population was positively correlated with those of neighbouring populations and the amount of mature forest relative to other serai stages. We compared the results of this survey with those of previous surveys to find that the total population of this species appears to be declining. Some conservation measures are proposed for forest habitat management, designed to avert the decline of the Amami rabbit and to ensure its preservation.

Implantation of B cluster ions into Si using decaborane (B10H14) has been demonstrated. SIMS measurements show that the depth distribution of boron atoms implanted with a monomer ion is exactly matched by that of boron atoms implanted from decaborane ions, if the cluster ion has an order of magnitude larger acceleration energy. According to the Langmuir-Child equation, two orders of magnitude larger space-charge limited ion beam current is possible when decaborane ions are used. Implanted boron atoms from decaborane ions are electrically activated after annealing. Junction depth of the implanted layer with 3 keV decaborane ions is approximately 20nm after annealing at 900°C. Molecular dynamic caluculations show that implantation efficency of boron monomer ions and decaborane ions are the same. However, the number of displaced silicon atoms per implanted boron atom from a decaborane ion impact is 4 times larger than that by boron monomer impact so that a heavily damaged region is created near the impact zone by decaborane ion penetration.

Heat treatment of bare single-domain LiNbO3 plates near the Curie temperature induces a local polarization reversal, thereby yielding a ferroelectric inversion layer. For a sufficiently long heat treatment the inversion layer thickness becomes equal to one half of the plate thickness. Similar domain inversion is also induced by heat treatment of protonexchanged LiTaO3. These domain inversion phenomena and a model for explaining the mechanism are reviewed.

The inversion layer has piezoelectric constants opposite in sign to those of the uninveiled domain. Therefore, a LiNbO3 plate with such an inversion layer can be used as a piezoelectric actuator similar to the bimorph, because bending motion or torsional motion can be piezoelectrically produced, depending on the plate orientation. The measured characteristics of these actuators are presented and demonstrated to exhibit excellent linearity and no hysteresis.

A new type of scanning X-ray diffracto-microscope (SXDM) / X-ray powder diffractometer (XPD) which uses a converged incident beam, was designed, manufactured, and some of its basic characteristics were examined. The optical system consists of asymmetric reflection type curved crystal monochromators for both incident and reflection beams, a detector (FSPC, X-ray film, IP, nuclear plate), a translation mechanism for the specimen and also for the detector.

Critical current densities and upper critical fields were measured for a single crystal of the high Tc oxide superconductor, Bi2Sr2CaCu2O8+d, within the ab basal plane and along the c axis. The anisotropy in critical current densities was observed to be Jc⊥/Jc//=10 in agreement with the anisotropy in resistivity for the normal state. The magnetic field dependence of the critical current densities can be interpreted by the anisotropy in the upper critical fields. The scaling of the critical current density with the magnetic field was found. The critical current density scaled to zero at fields Bc2 in the ab plane and along the c axis which were in good agreement with the upper critical fields measured by transport.

The anisotropy in flux pinning force density along the b axis, Fp//b, and along the a axis, Fp//a, was found to be Fp//b/Fp//a=3. The data provided strong evidence for flux pinning by the modulated structure in this system.

Thermally-assisted pulsed-laser annealing has been performed on ion-implanted silicon-on-sapphire(SOS) by irradiating Q-switched(20 nsec) ruby laser light during thermally heating. Raman scattering measurements have been made to estimate the residual strain of the annealed SOS. It was observed that Raman shift of SOS annealed in the temperature range of 400°C to 500°C was very close to that of single crystal silicon and the depolarization factor(the Raman intensity ratio of allowed z(xy)z to forbidden z(xx)z scattering configuration) was infinite, while Raman shift of SOS annealed at room temperature was shifted down to about 5 cm-1 and the depolarization factor was finite. It was found that the residual strain of SOS was relieved by the thermally-assisted pulsed-laser annealing, but the residual strain of SOS annealed at room temperature was inhomogeneous and attained to 7×10−3. The annealing temperature dependences of the residual strains were not explained well with a strictly thermal melting and recrystallization model in conjunction with the thermal expansion difference between silicon and sapphire, and suggested to need a new model.