Excimer laser crystallized silicon films have been studied as a function ofthe number of laser shots, and the influence of the use of suchpolycrystalline films in thin film transistors (TFTs) has also beeninvestigated. It is found that electron Mobility, one of the most importantof all TFT characteristics, increases monotonically with the number ofirradiations, with maximum mobility being obtained at about 20 shots. Thisresult is not due to grain size, since transmission electron microscopyindicates that the number of laser shots does not affect grain size inpolycrystalline silicon films. Raman studies and TFT carrier transportanalysis, on the other hand, suggest that this increase in electron mobilitymay be explained by the decrease in grain boundary defects and defectsinside grains.