Corundum structured α-(GaFe)2O3 alloy thin films were obtained on c-plane sapphire substrates by the mist chemical vapor deposition method. Wide range of X-ray diffraction 2θ/θ scanning measurements indicated that these crystals were epitaxially grown on c-plane sapphire substrates and these are no other crystal oriented phase. The cross-sectional and plane-view transmission electron microscope images showed the growth along the c-axis of α-(GaFe)2O3 thin films on sapphire substrates, forming joint of columnar structure. The non-doped α-(GaFe)2O3 thin films showed ferromagnetic properties at 300 K, though the origin of ferromagnetism still remained unresolved. In order to enhance the spin-carrier interaction, Sn doped α-(GaFe)2O3 alloy thin films were fabricated on c-plane sapphire substrates. X-ray diffraction 2θ/θ and ω scanning measurement results indicated that the highly-crystalline films were epitaxially grown on substrates in spite of the Sn-doping.