TiAl based thin-films possess high oxidation-resistance and high melting
points, making them possible candidates for application in electronics. The
behavior of the films upon exposure to various temperatures is of interest
for such application. In the present study, Ti37Al63
thin films were deposited onto SiO2 substrates using RF magnetron
sputtering from a compound target. Anneals were performed in vacuum at
temperatures ranging from 400 °C to 700 °C. The phases and microstructural
behavior of the films were evaluated as a function of annealing.
Microstructural behavior was correlated with resistivity changes in the
films. The behavior of Ti-Al films as potential under-layers for silver
metallization was also evaluated. The Ti-Al was observed to enhance the
thermal stability of pure Al thin-films. The results are relevant for
potential application of the films to electronics.