Heteroepitaxial CoxNi1-xSi2 layers with good crystalline quality have been formed by ion beam synthesis. Rutherford Backscattering (RBS) - Channeling, Auger Electron Spectroscopy (AES), Transmission Electron Microscopy (TEM) and X-Ray Diffraction (XRD) have been used to study the buried layers. For a sample with x=0.66, we found that this ternary suicide layer contains 11% type B and 89 % type A orientation. The TEM investigation reveals that the type B component is mainly located at the interfaces with a thickness of a few monolayers. XRD studies show that the strain of the type B component is smaller than that of the type A component, and this is probably the reason for such a unique distribution of the type B component in the epilayer.