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Relatively small-scale laser-driven sources of short
wavelength radiation covering a range from the extreme
ultraviolet to the hard X-ray regime are now available.
Because the duration of the X-ray pulses is comparable
to, or shorter than the laser pulse width, it is possible
to carry out X-ray measurements with picosecond or femtosecond
Melt-in velocities of picosecond laser-heated Si and GaAs were obtained from optical reflectivity measurements. We observed a velocity increase from about 100 m/s near the melting threshold to many hundred m/s at higher fIuences. With a new technique for picosecond time-resolved observation of atomic desorption we have been able to resolve the evaporation of Ga.
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