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Controlling particle contamination in wafer cleaning is important to reduce defect density and improve device performance and yield. In this study, a screening experiment was employed to evaluate particle removal efficiency among different cleanings, including FSI BCLN, bench rinse and dry only, bench SC1/megasonic only, bench RCA cleaning, and bench RCA-based cleaning. To optimize particle removal efficiency in RCA-based cleaning, a design of experiment (DOE) has been done to investigate the impact of SC1/megasonic cleaning on Si3N4 particle removal efficiency. Bath temperature, megasonic power, and solution chemistry of SCI bath were evaluated. The removal efficiency in relations to particle sizes was also investigated
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