Residual stress is generally evaluated using indentation by comparing the indentation curves of stressed and stress-free states. Here, we suggest a new method that can evaluate surface residual stress without indentation testing on stress-free specimen using stress-independent indentation parameters and an analysis of indentation contact morphology for the stress-free state. We found that several indentation parameters are independent of the stress by Vickers indentation testing on various stress states. The indentation contact morphology can be represented by indentation parameters including stress-independent ones, and by applying the stress-independent parameters obtained from the stressed state to the indentation contact depth function, we can estimate an indentation curve for stress-free state. The estimated curve matches well with the experimental stress-free indentation curve, and it was also confirmed that the applied stress values evaluated by comparing the estimated curve with the stressed indentation curve agree well with the reference values obtained from strain gauge.

We trace Sn nanoparticles (NPs) produced from SnO2 nanotubes (NTs) during lithiation initialized by high energy e-beam irradiation. The growth dynamics of Sn NPs is visualized in liquid electrolytes by graphene liquid cell transmission electron microscopy. The observation reveals that Sn NPs grow on the surface of SnO2 NTs via coalescence and the final shape of agglomerated NPs is governed by surface energy of the Sn NPs and the interfacial energy between Sn NPs and SnO2 NTs. Our result will likely benefit more rational material design of the ideal interface for facile ion insertion.

The Sewol ferry disaster is one of the most tragic events in Korea’s modern history. Among the 476 people on board, which included Danwon High School students (324) and teachers (14), 304 passengers died in the disaster (295 recovered corpses and 9 missing) and 172 survived. Of the rescued survivors, 72 were attending Danwon High School, located in Ansan City, and residing in a residence nearby. Because the students were young, emotionally susceptible adolescents, both the government and the parents requested the students be grouped together at a single hospital capable of appropriate psychiatric care. Korea University Ansan Hospital was the logical choice, as the only third-tier university-grade hospital with the necessary faculty and facilities within the residential area of the families of the students. We report the experiences and the lessons learned from the processes of preparing for and managing the surviving young students as a community-based hospital. (Disaster Med Public Health Preparedness. 2017;11:389–393)

Many transgenic domestic animals have been developed to produce therapeutic proteins in the mammary gland, and this approach is one of the most important methods for agricultural and biomedical applications. However, expression and secretion of a protein varies because transgenes are integrated at random sites in the genome. In addition, distal enhancers are very important for transcriptional gene regulation and tissue-specific gene expression. Development of a vector system regulated accurately in the genome is needed to improve production of therapeutic proteins. The objective of this study was to develop a knock-in system for expression of human fibroblast growth factor 2 (FGF2) in the bovine β-casein gene locus. The F2A sequence was fused to the human FGF2 gene and inserted into exon 3 of the β-casein gene. We detected expression of human FGF2 mRNA in the HC11 mouse mammary epithelial cells by RT-PCR and human FGF2 protein in the culture media using western blot analysis when the knock-in vector was introduced. We transfected the knock-in vector into bovine ear fibroblasts and produced knock-in fibroblasts using the clustered regularly interspaced short palindromic repeats (CRISPR)/Cas9 system. Moreover, the CRISPR/Cas9 system was more efficient than conventional methods. In addition, we produced knock-in blastocysts by somatic cell nuclear transfer using the knock-in fibroblasts. Our knock-in fibroblasts may help to create cloned embryos for development of transgenic dairy cattle expressing human FGF2 protein in the mammary gland via the expression system of the bovine β-casein gene.

The technological development of all kinds of lightweight transportation devices including vehicles, aircraft, ships, etc. has progressed markedly with the demand for energy saving and environmental protection. Aluminum alloy is in the spotlight as it is a suitable environmentally friendly material. However, deformation is a major problem during the welding process because aluminum alloy has a large thermal expansion coefficient. In addition, it is known that its corrosion resistance is excellent; nevertheless, in practice, considerable corrosion is generated and this is a major problem. To solve this problem, the friction stir welding (FSW) technology is applied extensively at various industrial fields as a new welding technique. This method involves a process in which materials are joined by frictional heat and physical force. Therefore, we evaluated improvements in mechanical properties and corrosion resistance through annealing heat treatment after FSW. The electrochemical experiment did not show a significant difference. However, the microstructure observation showed defectless, fine crystal particles, indicating excellent properties at 200–225°C.

The microstructural analysis of the dehydrogenation products of the Ca(BH4)2–MgH2 composite was performed using transmission electron microscopy. It was found that nanocrystalline CaB6 crystallites formed as a dehydrogenation product throughout the areas where the signals of Ca and Mg were simultaneously detected, in addition to relatively coarse Mg crystallites. The uniform distribution of the nanocrystalline CaB6 crystallites appears to play a key role in the rehydrogenation of the dehydrogenation products, which implies that microstructure is a crucial factor determining the reversibility of reactive hydride composites.

Stream restoration is an important process affecting the ecological health of stream ecosystems. There have been numerous cases of restoration, dealing with either structural or biological changes. In Korea, most restoration projects have merely dealt with improving hydrological characteristics or water quality; however, in recent years the improvement of ecological characteristics has been an increasing focus for restoration projects. In this study, we utilized data collected from 5675 stream sites in May 2007 to discover general patterns of anthropogenic modification in Korean streams. The survey results after application of the stream modification index (SMI; presence or absence type; high scores indicate more disturbed) provided a general distribution of disturbed/undisturbed streams or rivers in the watershed. We then compared the level of modification with the socio-geographical patterns (population, land coverage, elevation, and slope) for the watershed. The results show that streams in highly populated areas suffered from human modification compared with other well-preserved stream sites. In metropolitan cities, urbanized areas had positive relationship as identified by a high SMI. On the other hand, agricultural land cover identified an SMI increase for lowland river area. In general, mountainous streams possessed a better status in stream morphology due to different land-cover patterns (i.e., mainly forested area); however, some mountainous areas were impacted by concentrated summer rainfall. We could distinguish the forcing variables (i.e., land use pattern) for the disturbed streams through a comparison between the SMI and geographical information; the SMI application was able to identify areas of high necessity for restoration.

We have propsed MgO/AZO bi-layer transparent conducting oxide (TCO) for thin film solar cells. From XRD analysis, it was observed that the full width at half maximum of AZO decreased when it was grown on MgO precursor. The Hall mobility of MgO/AZO bi-layer was 17.5cm2/Vs, whereas that of AZO was 20.8cm2/Vs. These indicated that the crystallinity of AZO decreased by employing MgO precursor. However, the haze (=total diffusive transmittance/total transmittance) characteristics of highly crystalline AZO was significantly improved by MgO precursor. The average haze in the visible region increased from 14.3 to 48.2%, and that in the NIR region increased from 6.3 to 18.9%. The reflectance of microcrystalline silicon solar cell was decreased and external quantum efficiency was significantly improved by applying MgO/AZO bi-layer TCO. The efficiency of microcrystalline silicon solar cell with MgO/AZO bi-layer front TCO was 6.66%, whereas the efficiency of one with AZO single TCO was 5.19%.

Recently, non-volatile polymer memories have been researched as a next generation of non-volatile memory because of its simple structure and easy fabrication process. We found that two types of non-volatile polymer memory have different I-V behavior. First Polymer non-volatile memory with metal / oxide / polymer / metal structure But Polymer non-volatile memory embedded Au Nano-crystal shows different I-V behavior. Polymer non-volatile memory shows NDR(Negative Differential Resistance) Region after threshold voltage and low to high current path at increasing positive and negative bias. We can observe NDR(Negative Differential Resistance) Region on Polymer non-volatile memory embedded Au Nano crystal. We fabricated devices three different type to confirm difference Polymer non-volatile memory with metal / polymer / metal structure, metal / oxide / polymer / metal structure and Au nano-crystal embedded Polymer non-volatile memory. First we fabricated Polymer non-volatile memory with metal / PVK(Poly-n-vinyl carbarzole) / metal structure. first type of device shows ohmic I-V behavior. Second type of polymer non-volatile memory has oxide layer between metal and polymer layer. Oxide layer made by O2 plasma treatment(100W RF power, 100SCCM O2 gas flow) after metal layer deposited. Second type of device has same structure as first device except oxide layer. Second type of device shows I-V behavior similar to Resistive Memory. Resistive non-volatile memory shows low to high current path at increasing positive bias and high to low current path at increasing negative bias. I-V behaviors of second device due to effect of oxide layer between metal and polymer layer. Third type of polymer non-volatile memory we embed Au nano-crystal layer in polymer layer. Au nano-crystal layer embedded by curing process. We deposit 5nm Au layer after spin coated PVK(Poly-n-vinyl carbarzole) layer and curing at 300¡É. We can observe NDR(Negative Differential Resistance) Region and different I-V behaviors with other type of device. Finally we fabricated polymer non-volatile memory embedded au nano-crystal by dispersion method to confirm effect of au nano-crystal. We report difference I-V behaviors polymer non-volatile memory with metal / polymer / metal structure and polymer non-volatile memory embedded au nano-crystals

Many researchers have investigated organic nonvolatile memory devices as one of candidates device for next generation nonvolatile memory because of their low-cost, flexible and simple fabrication. The memory phenomenon in these devices is based on the electrical bistability of the material, which has two resistance states. We report memory effect in organic molecules based on electrical bistability of the materials and the bistable phenomenon was observed in poly(N-vinylcarbazole) (PVK) layer, containing a high density of Au nanocrystals and sandwiched between Al electrodes. The device was fabricated on cleaned SiO2. First, Al for the bottom electrode was deposited on SiO2 substrate by thermal evaporation in a vacuum chamber (pressure ∼10−6 torr). The PVK was dissolved with chloroform, spin-coated on the Al electrode, and baked at 120¡ÆC for 2 min to evaporate the solvent away. Subsequently, a 5-nm-thick Au film was deposited on the PVK. Additional PVK was then spin-coated on the Au film and baked. Next, the device was cured at 300¡É for 2 h in air to produce the Au nano-crystals. This device showed good nonvolatile memory characteristics. It was confirmed that it shows several region of current levels, (ION, IOFF, IINTER). When the voltage increased from zero in the OFF state (low conductivity state), the current increased rapidly at the threshold voltage (Vth), and presented a regime of negative differential resistance (NDR) after writing. Moreover ON and OFF states could be set at voltages at Vprogram (or Vp) and Verase (or Ve), respectively, and could be read at 1 V. After the device was programmed by sweeping the voltage from 0 to Vp, the current followed the high conductivity state and stayed in the ON state. And the device was programmed by sweeping the voltage from 0 to Ve, the current followed the low conductivity state and stayed in the OFF state. Furthermore, they exhibited seven different reversible current paths (intermediate states) capable for approving electron charge or discharge on surface of Au nanocrystals by sweeping the voltage from 0 to VNDR. Our results demonstrate that the fundamental parameters of the device were stable; the values of Vth, Vp, and Ve were ∼2.8, ∼4, and ∼8 V, respectively. In particular, this device exhibited excellent nonvolatile memory behavior, with bistability (ION/IOFF) of >1×102 and an intermediate state for multi-bit operation. We suggest that the current conduction mechanism clearly follow space-charge-limited(SCLC) for low conductivity state, thermionic field emission for electron charge(writing) or discharge(erasing), and F-N tunneling after erasing.