2 results
Molecular Beam Epitaxy study of a common a-GeO2 interfacial passivation layer for Ge- and GaAs-based MOS heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1155 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1155-C06-07
- Print publication:
- 2009
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Effects of Growth Parameters on the Epitaxy of CoSi2/Si(100) Formed by Reactive Deposition Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 402 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 505
- Print publication:
- 1995
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- Article
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