In this paper the potential of time-of-flight secondary ion mass spectroscopy combined with focused ion beam technology to characterize the composition of a solid oxide fuel cell (SOFC) in three-dimension is demonstrated. The very high sensitivity of this method allows even very small amounts of elements/compounds to be detected and localized. Therefore, interlayer diffusion of elements between porous electrodes and presence of pollutants can be analyzed with a spatial resolution of the order of 100 nm. However, proper element recognition and mass interference still remain important issues. Here, we present a complete elemental analysis of the SOFC as well as techniques that help to validate the reliability of obtained results. A discussion on origins of probable artifacts is provided.

The damage and ion distribution induced in Si by an inductively coupled plasma Xe focused ion beam was investigated by atom probe tomography. By using predefined patterns it was possible to prepare the atom probe tips with a sub 50 nm end radius in the ion beam microscope. The atom probe reconstruction shows good agreement with simulated implantation profiles and interplanar distances extracted from spatial distribution maps. The elemental profiles of O and C indicate co-implantation during the milling process. The presence of small disc-shaped Xe clusters are also found in the three-dimensional reconstruction. These are attributed to the presence of Xe nanocrystals or bubbles that open during the evaporation process. The expected accumulated dose points to a loss of >95% of the Xe during analysis, which escapes undetected.

Density multiplication of patterned templates by directed self-assembly (DSA) of block copolymers (BCP) stands out as a promising alternative to overcome the limitation of conventional lithography. Using the 300mm pilot line available in LETI and Arkema’s materials, the main objective is to integrate DSA directly into the conventional CMOS lithography process in order to achieve high resolution and pattern density multiplication at a low cost. Thus we investigate the potential of DSA to address contact and via level patterning by performing either CD shrink or contact multiplication. Our approach is based on the graphoepitaxy of PS-b-PMMA block copolymers. Lithographic performances of block copolymers are evaluated both for contact shrink and contact doubling. Furthermore, advanced characterization technics are used to monitor in-film self-assembly process. These results show that DSA has a high potential to be integrated directly into the conventional CMOS lithography process in order to achieve high resolution contact holes.

In this paper, fabrication of nanocomposite thin films with introduction of fullerene (C60) molecules in PolyMethyl MethAcrylate resist (PMMA) was investigated from a material and electrical point of view. The effective inclusion of C60 molecules in the samples was characterized by using UV-vis and Tof-SIMS instruments. The modified resist PMMA:C60 was also studied with Thermal analysis (TGA, DSC) where modification of physical properties is reported. Films were included in MIS and MIM devices and results on non volatile trapping of C60 doped PMMA are presented. Moreover, e-beam exposure tests showed that PMMA:C60 active layers for memory devices, were scalable in size.

Germanium has regained attention in the semiconductor industry for MOSFET application because of the higher mobility of carriers – two times higher mobility for electrons and four times for holes – as compared to silicon. In the opposite of the Silicon, the major issue with Germanium is to limit the n-dopant diffusion. Usual n-dopants (Phosphorus and Arsenic for example) are not electrically activated at an acceptable level without a large diffusion of the doping profile and a substantial dose loss. In this work, we have studied the influence of low energy and dose implant (15KeV to 40KeV @ 8E13 to 1E15at.cm−2) and low temperature anneal (515°C to 600°C) on diffusion, exodiffusion and activation of the phosphorus dopant into Germanium. The annealing steps were made in RTP furnace, the chemical profile and electrically active profiles were extracted by using Secondary-Ion-Mass Spectroscopy (SIMS) and sheet resistance measurement (Rs). To investigate the implantation-induced defects in depth, cross-sectional micrographs were made by using Transmission Electron Microscopy (TEM). Experimental results show that we achieved an efficient activation level by tuning both dose implant and anneal temperature, limiting the exodiffusion with pratically no diffusion of the dopant. We also show that very abrupt profile can be achieved with appropriate implant and thermal annealing conditions. To limit the leakage current in devices, we suppose we have to limit the defects generated during the implantation. Specially for dopant activation temperature anneal below 550°C, we have shown and observed by cross-sectional micrograph that the defects are totally removed by addition of a pre step of annealing at 400°C.

Nutrigenomics is the study of how constituents of the diet interact with genes, and their products, to alter phenotype and, conversely, how genes and their products metabolise these constituents into nutrients, antinutrients, and bioactive compounds. Results from molecular and genetic epidemiological studies indicate that dietary unbalance can alter gene–nutrient interactions in ways that increase the risk of developing chronic disease. The interplay of human genetic variation and environmental factors will make identifying causative genes and nutrients a formidable, but not intractable, challenge. We provide specific recommendations for how to best meet this challenge and discuss the need for new methodologies and the use of comprehensive analyses of nutrient–genotype interactions involving large and diverse populations. The objective of the present paper is to stimulate discourse and collaboration among nutrigenomic researchers and stakeholders, a process that will lead to an increase in global health and wellness by reducing health disparities in developed and developing countries.