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We use Raman scattering to study the spatially-resolved strain and stress in a complex zinc blende GaAs/GaP heterostructured nanowire which contains both axial and radial interfaces. The nanowires are grown by metal-organic chemical vapor deposition in the  direction with Au nano particles as catalysts, High spatial resolution Raman scans along the nanowires show the GaAs/GaP interface is clearly identifiable. We interpret the phonon energy shifts in each material as one approaches the interface.
Recently, Fickenscher et al.  have shown that, in a core-multi-shell structure where a GaAs quantum well is embedded into an AlGaAs shell wrapped around a  oriented GaAs nanowire, the electron and hole ground states are strongly confined to the corners of the hexagonally symmetric quantum well. Thus this confinement defines quantum wires which run along the length of the nanowires along its corners. Here we review single nanowire photoluminescence measurements which show the significant confinement energy of the excitons. For well widths larger than 5 nm, optical transitions between electron and hole excited states can be seen in excitation spectra, while for widths less than 5 nm only the ground state optical transitions are observed. For well widths smaller than 5 nm, high resolution spatially resolved photoluminescence measurements show directly the appearance of localized states. Single nanowire spectra from the 4 nm QWT sample display ultranarrow emission lines on the high energy side of the luminescence band. Spatially-resolved PL images show that these quantum dots are localized randomly along the length of the wire.
We study the photocurrent from photoexcited charged carriers excited with lasers of energy both above and below the energy gap in CdS nanostructures. We observe non-linear photocurrents in CdS nanosheet devices in the metal-semiconductor-metal configuration with Schottky contacts for sub-band gap excitations. Analysis of two-photon absorption dominated photocurrents reveals a nonlinear coefficient of β = 2 cm/GW for these nanosheet devices, which is comparable to those of bulk CdS. We demonstrate the use of the photocurrent polarization measurements to determine the orientation of atoms in the nanosheet.
We demonstrate the newly developed technique Photomodulated Rayleigh Scattering spectroscopy in order to probe the electronic band structure of single semiconductor nanowires. We show that both the electronic transition energies and nanowire diameter can be measured simultaneously and with high accuracy in a single non-destructive measurement. We demonstrate our results for zincblende GaAs as well as wurtzite InP nanowires where we probed the band gaps and transition energies at both room and low temperatures. This technique should advance the study of optical properties of single nanowires as well as other types of nanostructures.
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