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To evaluate the appropriateness of the screening strategy for healthcare personnel (HCP) during a hospital-associated Middle East Respiratory Syndrome (MERS) outbreak, we performed a serologic investigation in 189 rRT-PCR–negative HCP exposed and assigned to MERS patients. Although 20%–25% of HCP experienced MERS-like symptoms, none of them showed seroconversion by plaque reduction neutralization test (PRNT).
To investigate the characteristics and origins of methicillin-resistant Staphylococcus aureus (MRSA) strains isolated from neonatal patients admitted to a tertiary care hospital from local and primary care obstetrics clinics.
Molecular typing study.
A 1,278-bed tertiary care hospital (Samsung Medical Center) and 2 primary obstetrics clinics in Seoul, Korea.
The genotypic characteristics of 12 MRSA samples isolated from 11 neonatal patients transferred from 2 primary care obstetrics clinics to a tertiary care hospital were investigated by means of multilocus sequence typing, spa (staphylococcal protein A) typing, and SCCmec typing. Ten MRSA strains isolated from workers and environments in the associated obstetrics clinics were also investigated.
Although the antibiograms of isolates from 2 obstetrics clinics differed, no strain showed multidrug resistance to antimicrobials. Multilocus sequence typing analysis showed that all 22 MRSA isolates analyzed in this study had sequence type 1 (with the allelic profile 1-1-1-1-1-1-1), sequence type 493 (62-1-1-1-1-1-1), or a novel sequence type (25-1-1-1-1-1-1) and that all belonged to a single clonal complex (clonal complex 1). Moreover, they all contained SCCmec type IVA and the identical spa type (UJEBKBP). These genotypic characteristics are similar to those of typical community-associated MRSA strains rather than the hospital-acquired MRSA strains common in Korea.
The findings of this study suggest that community-acquired MRSA strains can spread in primary care clinics and be imported into tertiary care settings.
The effects of the isoelectronic Al-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to 500 cm2/Vs for the sample grown at a TMAl flow rate of 10 νmol/min, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.
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