The study of the evolution of organic matter subjected to space conditions, and more specifically to Solar photons in the vacuum ultraviolet range (120–200 nm) has been undertaken in low-Earth orbit since the 1990s, and implemented on various space platforms. This paper describes a photochemistry experiment called AMINO, conducted during 22 months between 2009 and 2011 on the EXPOSE-R ESA facility, outside the International Space Station. Samples with relevance to astrobiology (connected to comets, carbonaceous meteorites and micrometeorites, the atmosphere of Titan and RNA world hypothesis) have been selected and exposed to space environment. They have been analysed after return to the Earth. This paper is not discussing the results of the experiment, but rather gives a general overview of the project, the details of the hardware used, its configuration and recent developments to enable long-duration exposure of gaseous samples in tight closed cells enabling for the first time to derive quantitative results from gaseous phase samples exposed in space.

Mm(OH)3 (Mm = mischmetal) single crystalline needles with [001] growth axis form upon exposure of MmNi5-substituted alloys to aqueous KOH. Crystal structure, chemical composition and morphology of the needles are studied by means of scanning electron microscopy and quantitative transmission electron microscopy. The needles can be either solid (whiskers) or hollow (nanotubes). Their morphology and growth kinetics are studied as a function of immersion temperature, stirring rate of the aqueous KOH electrolyte and presence of tracer. Based on the observations, a model mechanism is developed for their growth.

Le dépôt de résidus des fabrications d'uranium et de thorium qui ont eu lieu sur le site du Bouchet (Essonne) de 1949 à 1970 est une des composantes du système de traitement et de rejet des déchets de l'usine. Au cours des opérations de démantèlement et d'assainissement de cette ancienne usine de la Direction des productions du CEA1 , la majeure partie des matières et matériels contaminés par des uranium et thorium ont été évacués (période de 1970-1979). Il subsiste deux zones occupant 1 ha : un bassin de décantation et une zone de dépôt pour les résidus solides. Les niveaux de flux d'émission radon avant la réhabilitation du site étaient 10 à 100 fois supérieurs à la moyenne des flux de radon à la surface de la terre (104 atome m-2 s-1) et les concentrations en descendants à vie courte du radon 222 étaient, dans l'environnement immédiat du site, supérieurs d'environ 20 % aux niveaux prescrits en 1991 par un arrêté du préfet de l'Essonne. Les différentes mesures de radioactivité réalisées sur le site, ou dans son environnement proche, mettent en évidence l'efficacité de la réhabilitation réalisée en 1992-1993, les niveaux en concentration des descendants à vie courte du radon étant du même ordre de grandeur que ceux rencontrés dans le Bassin parisien.

High quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550ºC andthe growth rate 100 A/min.

Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GalnAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm-3 have been measured by electrochemical profiling.

High quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.

Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.