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2 results

Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam
Carol Trager-Cowan, D. McColl, F. Sweeney, S. T. F. Grimson, J-F. Treguer, A. Mohammed, P. G. Middleton, S. K. Manson-Smith, K. P. O’Donnell, W. Van der Stricht, I. Moerman, P. Demeester, M. F. Wu, A. Vantomme, D. Zubia, S. D. Hersee
Journal: Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
Published online by Cambridge University Press: 13 June 2014, pp. 405-411
Print publication: 2000
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In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 μm thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10° toward the m-plane (10 0).

Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam
Carol Trager-Cowan, D. McColl, F. Sweeney, S. T. F. Grimson, J-F. Treguer, A. Mohammed, P. G. Middleton, S. K. Manson-Smith, K. P. O'Donnell, W. Van der Stricht, I. Moerman, P. Demeester, M. F. Wu, A. Vantomme, D. Zubia, S. D. Hersee
Journal: MRS Online Proceedings Library Archive / Volume 595 / 1999
Published online by Cambridge University Press: 03 September 2012, F99W5.10
Print publication: 1999
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In this paper we illustrate the application of electron beam techniques to the measurement of strain, defect and alloy concentrations in nitride thin films. We present brief comparative studies of CL spectra of AlGaN and InGaN epilayers and EBSD patterns obtained from two silicon-doped 3 μm thick GaN epilayers grown on an on-axis (0001) sapphire substrate and a sapphire substrate misoriented by 10° toward the m-plane (1010).

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Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam

Probing Nitride Thin Films in 3-Dimensions using a Variable Energy Electron Beam