5 results
GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 438-444
- Print publication:
- 2000
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GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W6.6
- Print publication:
- 1999
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Physical Properties of Bulk GaN Crystals Grown by HVPE
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e39
- Print publication:
- 1997
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GaN Layers Grown by HVPE on P-type 6H-SiC Substrates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e45
- Print publication:
- 1996
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Fabrication of GaN mesa structures
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 1 / 1996
- Published online by Cambridge University Press:
- 13 June 2014, e38
- Print publication:
- 1996
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