In view of the increasing complexity of both cardiovascular implantable electronic devices (CIEDs) and patients in the current era, practice guidelines, by necessity, have become increasingly specific. This document is an expert consensus statement that has been developed to update and further delineate indications and management of CIEDs in pediatric patients, defined as ≤21 years of age, and is intended to focus primarily on the indications for CIEDs in the setting of specific disease categories. The document also highlights variations between previously published adult and pediatric CIED recommendations and provides rationale for underlying important differences. The document addresses some of the deterrents to CIED access in low- and middle-income countries and strategies to circumvent them. The document sections were divided up and drafted by the writing committee members according to their expertise. The recommendations represent the consensus opinion of the entire writing committee, graded by class of recommendation and level of evidence. Several questions addressed in this document either do not lend themselves to clinical trials or are rare disease entities, and in these instances recommendations are based on consensus expert opinion. Furthermore, specific recommendations, even when supported by substantial data, do not replace the need for clinical judgment and patient-specific decision-making. The recommendations were opened for public comment to Pediatric and Congenital Electrophysiology Society (PACES) members and underwent external review by the scientific and clinical document committee of the Heart Rhythm Society (HRS), the science advisory and coordinating committee of the American Heart Association (AHA), the American College of Cardiology (ACC), and the Association for European Paediatric and Congenital Cardiology (AEPC). The document received endorsement by all the collaborators and the Asia Pacific Heart Rhythm Society (APHRS), the Indian Heart Rhythm Society (IHRS), and the Latin American Heart Rhythm Society (LAHRS). This document is expected to provide support for clinicians and patients to allow for appropriate CIED use, appropriate CIED management, and appropriate CIED follow-up in pediatric patients.

The K/Ar characteristics of 53 clay assemblages (Triassic–Cretaceous), representing the detrital, volcanogenic and arid-facies clay mineral associations, are interpreted in relation to their mineralogy, chronostratic age and geological origins. The K-bearing mineral components of the 1–2 μm, 0.2–1 μm and <0.2 μm fractions of each clay assemblage together display one of two characteristic patterns of K2O and 40Ar values (the K/Ar signature of the assemblage) on a 40Ar/K2O correlation diagram. Interpretation of the K/Ar signatures indicates that: (1) all of these clay assemblages are apparently unaffected by burial diagenetic illitization; (2) the Jurassic and Cretaceous detrital clay assemblages are derived from the reworking of weathered Caledonian metasediments (420 500 Ma) and weathered kaolin-bearing sediments of Upper Devonian/ Carboniferous age; and (3) the role played by palaeoclimate in developing the pattern of clay minerals in the Mesozoic sediments of England is much less significant than previously believed.

Noonkanbahite, ideally BaKNaTi2(Si4O12)O2, is described as a new mineral species. At Liley [Löhley], Eifel Mountains, Germany (the holotype locality), it occurs as sprays of prismatic crystals (up to 8 mm) or single prismatic crystals (up to 4 mm) on walls of cavities in alkaline igneous rocks. At Murun, Siberia, Russia, noonkanbahite forms coarse lamellar crystals up to 0.05 cm × 0.7 cm × 1.5 cm embedded in kalsilite syenite. Noonkanbahite is brittle, H = 6, Dobs. = 3.39(1), Dcalc. = 3.49 g/cm3, has a vitreous lustre and does not fluoresce in ultraviolet light. It has poor cleavage on {010} and {100} and weak parting on {011}. Noonkanbahite is biaxial positive with 2Vobs. = 75(2)°, 2Vcalc. = 72.7(9)°, α 1.730(5), β 1.740(5) and γ 1.765(5), dispersion is medium, r < v. In transmitted plane-polarized light, noonkanbahite is strongly pleochroic, with X colourless, Y yellowish, Z straw-yellow; X = a, Y = b, Z = c. Noonkanbahite is orthorhombic, space group Imma, a = 8.0884(4), b = 10.4970(5), c = 13.9372(6) Å, V = 1183.3(1) Å3, Z = 4. The strongest ten X-ray diffraction lines in the powder pattern [d in Å (I)(hkl)] are: 2.907(100)(222), 8.353(50)(001), 3.196(50)(220), 2.097(50)(242), 2.241(40)(215), 2.179(40)(035), 3.377(30)(031), 2.694(30)(015), 2.304(30)(233), and 1.564(30)(064). Electron microprobe analysis gives SiO2 37.82, TiO2 15.54, ZrO2 0.42, Nb2O5 3.18, Al2O3 0.17, Fe2O3 (recalculated from FeO) 5.63, MnO 0.32, MgO 0.53, BaO 20.60, CaO 1.36, K2O 5.32, Na2O 6.14, F 0.78, H2O 0.58, sum 98.39 wt.%, (H2O determined by SIMS). The formula unit, calculated on the basis of 14 anions (O+OH+F), is (Ba0.85K0.13)Σ0.98(K0.59Na0.26Ca0.15)Σ1.00Na(Ti1.23Fe0.453+Nb0.15Mg0.08Mn0.03Zr0.02Al0.01)Σ1.97 (Si3.99Al0.01O12)(O1.33OH0.41F0.26)Σ2.00, Z = 4.

The crystal structure was refined to R1 = 2.8% for 970 unique (F0 > 4σF) reflections collected on a Bruker single-crystal P4 diffractometer with a CCD detector and MoKα X-radiation. The crystal structure of noonkanbahite is isostructural with that of batisite, ideally BaNa2Ti2(Si4O12)O2, and scherbakovite, ideally K2NaTi2(Si4O12)O(OH). There are two octahedrally coordinated sites, M(1) and M(2), occupied by (Ti1.23Fe0.453+Nb0.15Mg0.08Mn0.03Zr0.02Al0.01), ideally Ti2 a.p.f.u. There are three interstitial A sites, [9]A(1), [8]A(2) and [6]A(3), occupied by Ba, K and Na, respectively. Si tetrahedra and M octahedra form a framework with interstitial cages occupied by Ba, K and Na atoms at the A sites. Noonkanbahite, BaKNaTi2(Si4O12)O2, is a K analogue of batisite, BaNa2Ti2(Si4O12)O2, and a Ba analogue of shcherbakovite, K2NaTi2(Si4O12)O(OH).

Electron paramagnetic resonance (EPR) and photo EPR measurements were performed on undoped semi-insulating (SI) 6H SiC material grown by the physical vapor transport (PVT) method. EPR lines from a carbon-related surface defect, two photosensitive high temperature stable intrinsic defects with S=1/2 and shallow nitrogen and boron were observed. The EPR spectrum of the intrinsic defect labeled XX was observed in the dark and consists of three single lines XX1, XX2, XX3 due to three inequivalent sites in the 6H SiC. The second defect labeled PP appeared in EPR spectrum during photo-excitation of the SI 6H SiC and consisted of a single EPR line. The photo EPR data placed the energy level of the defects in the region EV + 1.24 ÷ 1.29 eV. The EPR parameters and symmetry behavior of XX agree well with those of the carbon vacancy-related Ky center observed in p-type electron irradiated 6H SiC and we tentatively identify the XX defect with VC+. The electronic processes occurring in undoped SI 6H SiC under photo-excitation are also described.

Copper is a prevalent contaminant in silicon device fabrication. Since Cu has high solubility in Sn, we are exploring the use of Sn to form Cu-Sn surface alloys as a means to inhibit Cu diffusion into Si substrates. Cu/Sn/Si (111) samples were prepared by MBE at 100°C, then annealed at temperatures between 300°C and 600°C. Resultant surface structures were imaged by AFM and SEM. AES and EDX were used to investigate the composition of two differently shaped clusters that formed after annealing. Etching with dilute HCI solutions was used to seek the chemical origin of various surface morphologies. The results are compared with those from Sn/Si and Cu/Si samples. A possible model for the evolution of 3-D structures in the Cu/Sn/Si(111) system will be presented.

Significant progress has been realized in the use of quantum well intermixing (QWI) as a method for tailoring the bandgap energies of optoelectronic devices. Intermixing can be driven by an ion implantation process, an approach that appeals because of its simplicity, its planarity and its adaptability to selective area processing. Despite its success, the advantages of irradiation induced QWI need to be tested further and we report here current results of three research activities which address a) the existence or not of a simple scaling relationship which connects intermixing in a given QW structure for any ion species; b) reproducibility of intermixing in identical QW structures which have been obtained from different growth systems; and c) intermixing for above the well versus through the well implantation.

Understanding has advanced significantly in the interpretation of the thermal release of self interstitials into a silicon lattice from a region, e.g. ion implanted, which is rich in point defects. Progress has been accelerated through the use of delta doped layer structures, especially of boron doping type, where the transient enhanced diffusion (TED) of the dopant marks the arrival of the self interstitial species from a physically separate damage region. Frequently observed in such TED experiments is an immobile, electrically inactive, boron peak on top of the spreading diffusion profile. This signature boron peak has been attributed to the Si-interstitial driven clustering of boron. It has been observed that this feature occurs for high boron concentrations and implant fluences; however, a complete understanding of the clustering mechanism has remained elusive.

We present new data from experiments where the self implant fluence has been varied to allow the intensity of the transient flux to be adjusted and where repeat distances in the MBE structure have been adjusted to test for trapping. This has led to some clarifications to the current picture of boron clustering during TED. These results seem to be important in the context of the search for engineering control over dopant redistribution in Si during post-implantation annealing.

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The Pdoped silicon was implanted with boron ions of 40 keV energy to a dose of 3 × 1014 cm-2, and then annealed at temperatures ranging from 700–1000°C in a N2 ambient for varying durations. As P doping concentration increased from 3 × 1019 to 1 × 1020 cm-3, boron diffusivity and the immobile boron fraction decreased. Our experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. We present new data which address a number of questions raised by the present models. We show that in our experiments bulk trapping of interstitials is significant only for low implant fluences (˜1012 cm2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the δ-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. We suggest that some part of the observed TED response with depth is attributable to local trapping of silicon interstitials within the boron doped layers.

A study has been made of B transient enhanced diffusion (TED) in heavily P-doped Si using secondary ion mass spectroscopy (SIMS) and positron annihilation spectroscopy (PAS). The Pdoped silicon was implanted with boron ions of 40 keV energy to a dose of 3 x 1014 cm-2, and then annealed at temperatures ranging from 700–1000°C in a N2 ambient for varying durations. As P doping concentration increased from 3 x 1019 to 1 x 1020 cm-3, boron diffusivity and the immobile boron fraction decreased. Our experimental results are inconsistent with the predictions of the Fermi-level model and suggest that the clustering between B atoms and Si interstitials should be invoked in order to explain the immobile portion of the B peak during TED.

Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. We present new data which address a number of questions raised by the present models. We show that in our experiments bulk trapping of interstitials is significant only for low implant fluences (∼1012 cm −2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the δ-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. We suggest that some part of the observed TED response with depth is attributable to local trapping of silicon interstitials within the boron doped layers.

Significant progress has been made in the past year in the use of high energy (MeV) ion irradiation to tune the bandgap and therefore emission wavelengths of single and multiple quantum well structures. These shifts are attributable to compositional mixing across the well and barrier layer interfaces, a process that is driven by the vacancy flux, released during the anneal stage, from radiation defects. We present data from a series of measurements in both GaAs- and InP-based QW structures to demonstrate the importance of the implantation parameters chosen (ion species, energy, flux, fluence and implant temperature). The dramatic difference in the response of these two systems with regard to the implant depth is believed to be associated with the very different diffusivities of the Gp III site vacancies. Prospects for implementing the irradiation approach as a spatially selective, planar process in integrated optoelectronic circuitry look very attractive and are illustrated for both passive and active components by reference to recent results from tuned wavelength lasers.

Variable energy positron annihilation and Rutherford backscattering spectroscopy have been used to investigate the evolution of secondary defects during the annealing of self-ion irradiated silicon. Evidence supporting the existence of both vacancy- and interstitially-based defects after high temperature anneals is presented. Dopant type and irradiation temperature have both been shown to influence the structure of the defects whose onset can be manipulated via the implantation flux.

Properties of ultrathin (— lOnm) silicon nitride films on single crystal Si, InP and GaAs have been studied using Raman spectroscopy, medium energy ion scattering (MEIS), variable-energy positron annihilation spectroscopy and x-ray photoelectron spectroscopy (XPS). The silicon nitride films were prepared by remote microwave plasma chemical vapour deposition (RPCVD). The results showed that oxidation of the film due to air exposure was restricted to the near surface with an oxygen penetration depth no greater than 2 nm. The residual stress in the as-grown films was substrate-dependent. For films on Si (100), the film induced residual stress was compressive with a value of 0.5GPa. Annealing at 500°C for 60 minutes resulted in a complete release of the residual stress. Vacuum annealing at a temperature below 500° C also led to changes of the electrical properties in the films but not the substrate.

Fluoroboron (BF2+) ion implantation into silicon is frequently used for fabrication of shallow junctions. For scaling down of the junction dimensions, one of the efficient approaches is to lower the implantation energy. This work reports fluoroboron ion interactions with (100) oriented silicon at 10 to 500 eV ion energy. Ion bombardment was carried out using a mass-separated BF2+ ion beam in an ultrahigh vacuum low energy ion beam system. The temperature of the silicon crystal during bombardment was kept either at room temperature or 500°C. The reactions (both etching and incorporation) were characterized by x-ray photoemission spectroscopy (XPS), Rutherford backscattering (RBS) and Raman scattering. The results show that BF2+ ions dissociated on the silicon surface at an energy as low as 10 eV and most of fluorine segregated to the surface and desorbed. Both the physical and chemical etching rate of the beam were energy dependent but much lower than the accumulation rate. For beam fluences higher than 1 × 1018/cm2, continuous amorphous boron films were deposited on silicon.

We report new measurements of the regrowth behaviour of Pb-implanted SrTiO3 crystals in the presence of water vapour. Doubly labelled water vapour, D218O, at greater than 95% enrichment in each isotope has been added to the annealing ambient and depth profiles of D and 18O have been obtained from the regrown crystals using secondary ion mass spectrometry (SIMS). The D and 18O content has also been measured by nuclear reaction analysis (NRA) using the reactions D(3He,p)4 He and 18O(p,α)15 N. The crystals were regrown in a conventional furnace under a controlled gas ambient and time-resolved optical reflectivity (TRR) was used to dynamically monitor the regrowth rate during the anneal. An enhancement of the solid-phase epitaxial regrowth rate is observed when water vapour is added to the annealing ambient. This rate increase is accompanied by incorporation of D throughout the regrown layer. 18O is incorporated into the lattice but does not appear to penetrate deep enough to influence the regrowth rate.

We have used RBS/Channeling, perturbed angular correlation (PAC) and optical absorption to study the regrowth of disordered layers in diamond produced by implantation with carbon, or with carbon plus boron or indium ions. For C or C plus B implantation doses of 2 ×1015 cm−2 or less, complete recovery of channeling damage occurred after RTA at 1100°C or furnace annealing at 900°C. Optical measurements on samples implanted with high energy carbon ions show better recovery compared to the shallower implantations. PAC results showed that co-implantation with C and In caused a considerable fraction (∼15%) of the In-atoms to occupy well-defined lattice sites characterized by an electric field gradient having its major component along <111>, and a frequency of 116 MHz.