33 results
Luminescence efficiency of InGaN/GaN quantum wells on bulk GaN substrate
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- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF32-02
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- 2005
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Application of orthodox defect-selective etching for studying GaN single crystals, epitaxial layers and device structures
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- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 247-249
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- July 2004
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Capture kinetics at dislocation-related deep levels in III-V heterostructures
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- The European Physical Journal - Applied Physics / Volume 27 / Issue 1-3 / July 2004
- Published online by Cambridge University Press:
- 15 July 2004, pp. 201-205
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- July 2004
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Low dislocation density, high power InGaN laser diodes
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 9 / 2004
- Published online by Cambridge University Press:
- 13 June 2014, e3
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- 2004
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Light emitters fabricated on bulk GaN substrates. Challenges and achievements.
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I4.7.1
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- 2001
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Magneto-Spectroscopy of Two-Electron Transitions in Homoepitaxial GaN.
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- MRS Online Proceedings Library Archive / Volume 693 / 2001
- Published online by Cambridge University Press:
- 21 March 2011, I8.10.1
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- 2001
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Homo-epitaxial growth on misoriented GaN substrates by MOCVD
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 425-431
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- 2000
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High Magnetic Field Studies of AlGaN/GaN Heterostructures Grown on Bulk GaN, SiC, and Sapphire Substrates
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G7.3
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- 2000
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Two-dimensional electron gas scattering mechanisms in AlGaN/GaN heterostructures
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- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G7.5
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- 2000
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Mg Segregation, Difficulties of P-Doping in GaN
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 500-506
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- 2000
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TEM Study of Mg-Doped Bulk GaN Crystals
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- MRS Online Proceedings Library Archive / Volume 572 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 363
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- 1999
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GaN Homoepitaxy for Device Applications
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 878-889
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- 1999
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Mg Segregation, Difficulties of P-Doping in GaN
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W9.7
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- 1999
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Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
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- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 484-489
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- 1999
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Homo-Epitaxial Growth on Misoriented GaN Substrates by MOCVD
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- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W6.3
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- 1999
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GaN Homoepitaxy for Device Applications
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
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- 10 February 2011, G10.2
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- 1998
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Polarity of GaN
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- MRS Online Proceedings Library Archive / Volume 512 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, 363
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- 1998
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Homo- and Hetero-Epitaxial Gallium Nitride Grown by Molecular Beam Epitaxy
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- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G4.11
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- 1998
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Thermodynamics and Growth of GaN Single Crystals Under Pressure
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- MRS Online Proceedings Library Archive / Volume 499 / 1997
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- 10 February 2011, 349
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- 1997
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Observation Of Native Ga Vacancies In Gan By Positron Annihilation
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- MRS Online Proceedings Library Archive / Volume 482 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 757
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- 1997
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