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This contribution reports on the biosynthesis of nickel oxide and zinc oxide nanoparticles (NiO-NPs & ZnO-NPs) via a natural extract from Moringa Oleifera leaves as an effective chelating and/or oxidizing/reduction agent of nickel nitrate hexahydrate and zinc nitrate hexahydrate. The structural and optical properties of these two types of semiconductors obtained in a similar procedure are investigated using X-rays Diffraction (XRD), Attenuated Total Reflection-Fourier Transform Infrared (ATR-FTIR), diffuse reflectance UV-Visible-NIR and Photoluminescence (PL) techniques. The structural analysis shows the formation of pure cubic NiO-NPs and pure wurtzite ZnO-NPs with an average crystallite size of 17.80 nm and 10.81 nm respectively. Their band gaps, calculated from the diffuse reflectance analysis were found to be 4.28 eV and 3.35 eV respectively.
In this study, zinc oxide nanoparticles (ZnO NPs) in powder and in thin film were successfully synthesized first time using an eco-friendly, simple and cost effective green synthesis method mediated by corn husk (Zea mays) extract as an effective chelating agent, and zinc nitrate hexahydrate as precursor. Diverse characterizations techniques such as High Resolution – Scanning Electron Microscopy (HR-SEM), Energy Dispersive X- rays Spectroscopy (EDS), X-Rays Diffraction (XRD), and UV – Vis – NIR spectroscopy as well as Photoluminescence (PL) were investigated to confirm ZnO NPs nature. For the ZnO NPs powder, highly crystalline ZnO nanoparticles (ZnO NPs) annealed at 500°C which are 48.635 nm in particles size were characterised by HR-SEM and XRD analysis. The structure morphology and the constituents of the resultant ZnO powder were investigated respectively by HR-SEM and EDS. UV – Visible spectroscopy analysis was investigated on the optical band gap of ZnO NPs, which was calculated to be 3.31 eV. This result indicates that ZnO NPs can be used in metal oxide semiconductor-based devices. For the ZnO NPs thin film, XRD patterns of hexagonal wurtzite structure with c/a ratio about of 1.60 and μ – parameter of 0.38 were obtained. PL measurements showed a broad emission band in the 380 – 800 nm range, centred at 481 nm. ZnO NPs thin film yielded relatively more intense photoluminescence spectra than the ZnO NPs powder. The intrinsic point defects and defect level transitions responsible for the broad emission are discussed.
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