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This study aimed to investigate the relationship between depression in older nursing home residents and family caregivers’ (FCGs) depressive status and reasons for involvement with residents.
This study employed a cross-sectional design.
Eight nursing homes in northern Taiwan.
A total of 139 older resident–FCG pairs were recruited.
Depression was measured with the Geriatric Depression Scale-Short Form for nursing home residents and the Center for Epidemiologic Studies Depression Scale-Short Form for family members. Depression and demographic data were collected with face-to-face interviews. The meaning ascribed to caregivers’ nursing home visits was calibrated using the Family Meaning of Nursing-Home Visits scale. Multiple logistic regression was used to understand the factors related to residents’ depressive symptoms.
Depressive symptoms were present in 58.3% of the nursing home residents (n = 81). Depressive status of family members (Chi-square = 1.46, p = 0.23) or family’s visiting frequency (Chi-square = 1.64, p = 0.44) did not differ between residents with or without depressive symptoms. Factors associated with an increased risk of residents having depressive symptoms were age, self-perceived health status, and having a caregiver motivated to visit to assuage their guilt.
Visiting a family member to assuage their guilt was the only caregiver variable associated with depressive symptoms for nursing home residents. This finding suggests that developing interventions to improve personal relationships between nursing home residents and family members might facilitate the emotional support of caregivers and psychological support for older nursing home residents in Taiwan.
Background: Early detection and appropriate treatment interventions for depressive symptoms in the elderly are important issues for healthcare systems. However, few studies to date have focused on understanding self-care strategies to manage depressive symptoms among elderly people worldwide. The purpose of this study was to explore self-care management strategies and risk factors for depressive symptoms among elderly outpatients in Taiwan.
Methods: A convenience sample of elderly persons (≥65 years old; N = 1054) was recruited from outpatient clinics of two hospitals in northern Taiwan.
Results: In our sample, the prevalence of depressive tendency was 16.3%. The majority of participants (70.1%) managed depressive symptoms with self-care strategies. The strategy most often used to relieve depressive symptoms was “take a walk.” The main information source for self-care strategies was self-learning. Depressive tendency in this sample was shown by logistic regression analysis to be significantly predicted by gender, marital status, perceived income adequacy, perceived health condition, stroke, and cancer.
Conclusion: Elderly people need to be made more aware of strategies to self-manage depressive symptoms. Healthcare providers can decrease/prevent the first risk factor for depressive symptoms (poor perceived health status) by improving elders’ perceived health and promoting their actual health. The second risk factor (poor perceived income adequacy) can be decreased/prevented by carefully assessing patients’ financial situation during clinic visits and providing suitable referral for further assistance.
In this paper, location-controlled Silicon crystal grains are fabricated by a novel excimer laser crystallization method. An array of 1.8-μm-sized disk-liked grains are formed by this method, and the high-performance n-channel LTPS TFTs with field-effect-mobility reaching 308 cm2/Vs can be fabricated owing to the artificially-controlled lateral grain growth. This position-manipulated Silicon grains are essential to high performance and good uniformity thin film transistors.
A novel T-shaped-gated (T-Gate) polycrystalline silicon thin-film transistor (poly-Si TFT) with vacuum gaps has been proposed and fabricated only with a simple process. The T-Gate structure is formed only by a selective undercut-etching technology of the Mo/Al bi-layers. Then, vacuum gaps are in-situ embedded in this T-Gate structure subsequent to capping the SiH4-based passivation oxide under the vacuum process chamber. Experimental results reveal that the proposed T-Gate poly-Si TFTs have excellent electrical performance, which has higher maximum on-off current ratio of 4.6 e107, and the lower off-state leakage current at VGS = -10 V and VDS = 5V of about 100 times less than that of the conventional one. It is attributed to the additional undoped offset region and the vacuum gap to reduce the maximum electric field at drain junction while ascribed to the sub-gate to maintain the on-current. Therefore, such a T-Gate poly-Si TFT is very suitable for the applications and manufacturing in active matrix liquid crystal displays (AMLCDs) and active matrix organic light emitting diodes (AMOLEDs).
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