Ginzburg-Landau type complex partial differential equations are simplified mathematical models for various pattern formation systems in mechanics, physics and chemistry. Most work so far has concentrated on Ginzburg-Landau type equations with one spatial variable (1D). In this paper, the authors study a complex generalised Ginzburg-Landau equation with two spatial variables (2D) and fifth-order and cubic terms containing derivatives. Based on detail analysis, sufficient conditions for the existence and uniqueness of global solutions are obtained.

Large-area single-crystalline vanadium dioxide nanoflakes were first fabricated via a thermal reduction method in a tube furnace. The sample was characterized by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy, and transmission electron microscopy. The results show that VO2 nanoflakes are single-crystalline with a monoclinic structure. The VO2 nanoflakes have a width of 200–300 nm, a thickness of 50–100 nm, and a length up to 1–2 μm. It is found that single-crystalline VO2 nanoflakes show a novel and complicated 5–7-step Li-storage behavior for an insertion amount of <0.6 mol lithium per mol of VO2.

In the paper we prove a result on the existence of positive solutions for a class of nonvariational elliptic system with nonlocal source by Galerkin methods and a fixed point theorem in finite dimensions. We establish another existence result by the super and subsolution method and a monotone iteration.

Recently there has been considerable interest in developing nanometer- and sub-nanometer-scale electronic devices. Of particular interest in this regard is whether individual molecules or molecular complexes can be employed as electronic device elements. Aviram et al. have reported switching and rectification in an organic thin film. More recently, Potember et al. have shown a field-induced conductance transition on a 500 nm scale, but did not demonstrate local reversibility of the transition. The reverse transition was induced only by application of a broad laser pulse or heat. We have observed and replicated reversible conductance transitions in a fully-organic crystalline complex, on a scale close to the dimensions of the unit cell.

A crystalline thin-film organic complex of 3-nitrobenzal malononitrile and 1,4-phenylenediamine (NBMN-pDA), exhibits reversible conductance transitions on the sub-nanometer scale when exposed to local electric field pulses from an STM tip.

A large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath.

A large-scale plasma source immersion ion implantation (PSII) system with planar coil RFI plasma source has been used to study an inkless, deposition-free, mask-based surface conversion patterning as an alternative to direct writing techniques on large-area substrates by implantation. The apparatus has a 0.61 m ID and 0.51 m tall chamber, with a base pressure in the 10−8 Torr range, making it one of the largest PSII presently available. The system uses a 0.43 m ID planar rf antenna to produce dense plasma capable of large-area, uniform materials treatment. Metallic and semiconductor samples have been implanted through masks to produce small geometric patterns of interest for device manufacturing. Si gratings were also implanted to study application to smaller features. Samples are characterized by AES, TEM and variable-angle spectroscopic ellipsometry. Composition depth profiles obtained by AES and VASE are compared. Measured lateral and depth profiles are compared to the mask features to assess lateral diffusion, pattern transfer fidelity, and wall-effects. The paper also presents the results of MAGIC calculations of the flux and angle of ion trajectories through the boundary layer predicting the magnitude of flux as a function of 3-D location on objects in the expanding sheath