4 results
Modeling of InGaN MOVPE in AIX 200 Reactor and AIX 2000 HT Planetary Reactor
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue 1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, e5
- Print publication:
- 1999
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GaN-Based Materials for Blue Emitting Device Structures Grown in Multiwafer Planetary® Reactors
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e38
- Print publication:
- 1998
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Current status of GaN crystal growth by sublimation sandwich technique
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 3 / 1998
- Published online by Cambridge University Press:
- 13 June 2014, e50
- Print publication:
- 1998
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High Quality Al-Ga-In-N Heterostructures Fabricated by MOVPE Growth in Multiwafer Reactors
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 2 / 1997
- Published online by Cambridge University Press:
- 13 June 2014, e9
- Print publication:
- 1997
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