7 results
High Integrity SiO2/Al2O3 Gate Stack for Normally-off GaN MOSFET
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1561 / 2013
- Published online by Cambridge University Press:
- 27 June 2013, mrss13-1561-cc02-08
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- 2013
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Normally-off GaN MOSFETs on Silicon Substrates with High-temperature Operation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1202 / 2009
- Published online by Cambridge University Press:
- 31 January 2011, 1202-I09-05
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- 2009
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Enhancement Mode GaN MOSFETs on Silicon Substrates with High Field-effect Mobility
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1068 / 2008
- Published online by Cambridge University Press:
- 01 February 2011, 1068-C03-02
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- 2008
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Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I16-06
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- 2006
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500 K operation AlGaN/GaN HFETs with a large current and a high breakdown voltage
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- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I15-20
- Print publication:
- 2006
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High Power AlGaN/GaN Schottky Barrier Diode with 1000 V Operation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF05-02
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- 2005
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Effects of the high-refractive index SiNx passivation on AlGaN/GaN HFETs with a very low gate-leakage current
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF05-03
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- 2005
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