1 results
High Temperature MOVPE Growth of AlxGa1−xN (0.2-1) Layers on Sapphire and SiC Substrates for the Fabrication Deep UV Optical Devices
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 955 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0955-I04-03
- Print publication:
- 2006
-
- Article
- Export citation