High power durable electrodes have been successfully grown on 38.5° rotated Y-X LiTaO3 piezoelectric substrates featuring epitaxial Al films with a pseudo-homoepitaxial Ti intermediate layer. We found that a two-step process sequence in the deposition temperature of an intermediate layer could make it possible for an Al/Ti structure to grow epitaxially on low-cut-angle Y-X LiTaO3. Specified epitaxial relationship was Al(111)<011>//Ti(001)<100>//LiTaO3(001)<100>. Duplexers with epitaxial Al electrodes had a breakdown power above 6 W and more than ten times longer lifetime in contrast to filters with polycrystalline electrodes of which the breakdown power is 3.4 W. Epitaxial electrodes with extremely less grain boundary can improve power durability because self-diffusion of Al atoms occurs mainly in the grain boundary of the film. Material variation of epitaxial electrodes will be discussed as well.