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Short-period AlGaN based superlattices for deep UV light emitting diodes grown by gas source molecular beam epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 892 / 2005
- Published online by Cambridge University Press:
- 01 February 2011, 0892-FF01-06
- Print publication:
- 2005
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Low-noise, Low-dark-current GaN Diodes for UV Detectors
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G11.27
- Print publication:
- 2000
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High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 467-473
- Print publication:
- 2000
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High Quality AlN and GaN Grown on Si(111) by Gas Source Molecular Beam Epitaxy with Ammonia
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W8.3
- Print publication:
- 1999
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Analysis of the Structure of Light-emitting Porous Silicon by Raman Scattering
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- Journal:
- MRS Online Proceedings Library Archive / Volume 256 / 1991
- Published online by Cambridge University Press:
- 15 February 2011, 13
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- 1991
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