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1 results

  • Anomalous Evolution of Bubbles in Krypton-Implanted SiO2

  • Hannan Assaf, Esidor Ntsoenzok, Marie-France Barthe, Elisa Leoni, Marie-Odile Ruault, S. Ashok
  • Journal:
    MRS Online Proceedings Library Archive / Volume 994 / 2007
    Published online by Cambridge University Press:
    01 February 2011, 0994-F06-04
    Print publication:
    2007

  • Thermally grown SiO2 was implanted at room temperature with 220 keV Kr in order to generate bubbles/cavities in the sample. The formation and thermal stability of these bubbles/cavities is studied in this work. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterisation of defects (bubbles, vacancy, Kr and other types of defects) created by Kr implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM were a consequence of the interaction between Kr and vacancies (V), with VnXem complexes created in the whole of implanted zone. After annealing, bubbles/cavities disappear from SiO2 due to the strongly desorption of Kr and the decrease in vacancy concentration.