We studied high-dose implantation of tungsten into 6H-silicon carbide in order to synthesize a highly conductive surface layer. Implantation was performed at 200 keV at room temperature. Subsequently, the samples were annealed in two steps at 500°C and 700°C or 950°C, respectively. The influence of dose and annealing temperature on the reaction of W with SiC was investigated. Rutherford Backscattering Spectrometry (RBS), X-Ray Diffraction (XRD) and Auger Electron Spectroscopy (AES) contributed to study structure and composition of the layer as well as chemical states of the elements. During implantation sputtering became significant at a dose exceeding 1.0×1017 W+cm−2. Formation of tungsten carbide and suicide was observed already in the as-implanted state. An annealing temperature of 950°C was necessary to crystallize tungsten carbide. However, tungsten suicide remained amorphous at this temperature. Therefore, a mixture of polycrystalline tungsten carbide and amorphous tungsten suicide evolved under these conditions. The resistivity of such a layer implanted with 1.0×1017 W+ cm−2 and annealed at 950°C is 565 μΩcm.