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Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 775-781
- Print publication:
- 2000
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Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.54
- Print publication:
- 1999
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Composition Dependence of the Band Gap Energy of InxGa1−xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 106-111
- Print publication:
- 1999
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Composition Dependence of the Band Gap Energy of InxGal-xN Layers on GaN (x≤0.15) Grown by Metal-Organic Chemical Vapor Deposition
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 10 February 2011, G2.8
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- 1998
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Resonant Raman Scattering in GaN/Al0.15 Ga0.85N and InyGa1-yN/GaN/AlxGa1-xN Heterostructures
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 213
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- 1997
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Plasma Cleaning and Nitridation of Sapphire Substrates for AlxGa1-xN Epitaxy as Studied by ARXPS and XPD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 468 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 193
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- 1997
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