We present an attempt to clarify the valence band order of ZnO and MgxZn1−xO films grown by pulsed laser deposition (PLD) on sapphire substrates. We derive the dependence of spin orbit interaction (Δso) and crystal field interaction (Δcf) on the temperature, strain and cation replacement (Zn with Mg) and compared this with theoretical predictions. The strain was varied by using different orientated sapphire substrates (c-, r-, and m-plane orientations) and by varying the film thicknesses. All these investigations support the conclusion that the symmetry order of the valence band is Γ7-Γ9-Γ7 for ZnO and MgxZn1−xO for x ≤ 0.55.

A large-area pulsed laser deposition process for high-quality YBa2Cu3O7−δ (YBCO) thin films on both sides of R-plane sapphire substrates with CeO2 buffer layer is used routinely to optimize planar microwave filters for satellite and mobile communication systems. With the experience of more than 700 double-sided 3-inch diam. YBCO:Ag films a high degree of reproducibility of jc values above 3.5 MA/cm2 and of state of the art R5 values is reached. TEM cross sections of the large-area and double-sided PLD-YBCO:Ag thin films on R-plane sapphire with CeO2 buffer layers show typical defects like stress modulation, stacking faults, a-axis oriented grains, precipitates and interdiffusion layers. YBCO films on SrTiO3 / YBCO* / CeO2 film systems on R-plane sapphire wafers have more growth defects compared to bare CeO2 buffers on sapphire but show as microwave resonators encouraging electrical tunability.

Thin films of the orthorhombic perovskite GdAlO3 were grown on R-plane sapphire single crystals. Two different film growth methods were used, viz. (i) a chemical reaction of a Gd-O plasma with the sapphire crystals, and (ii) the reactive radio frequency (r.f.) sputtering of a GdAlO3 target. Subsequently, YBa2Cu3O7-δ (YBCO) films were deposited onto the GdAlO3 buffer by pulsed laser deposition (PLD). The GdAlO3 and YBCO films were investigated by Xray diffraction pole figure analysis and transmission electron microscopy (TEM), including highresolution transmission electron microscopy of cross sections. Independent of the deposition method the GdAlO3 films grew according to the nearly equivalent orientation relationships The GdAlO3 grains are additionally tilted by angles up to ± 3° around the sapphire [11.1] axis. On top of these buffer layers the YBCO films grew with c-orientation and with an in-plane rotation of 45°. YBCO films of 200 nm thickness on GdAlO3 buffer layers with a thickness of 10 to 20 nm showed a Tc > 87 K and a jc(77 K) > 3×106 A/cm2.

An arrangement for large area PLD on 3-inch wafers is proposed. In order to get a homogeneous stoichiometry and thickness distribution and small variations of superconducting properties on the 3-inch diameter, the substrate is foreseen to be rotated and additionally laterally moved up to 45 mm during deposition whereas the laser plume remains fixed.

YSZ buffer layers showed thickness homogeneity of 1% within 10 mm, of 4% within 2 inch and of 8% within 3 inch diameter, respectively. For in-situ deposited YBCO thin films on r-plane sapphire with YSZ buffer layer we inductively measured within 3 inch diameter values of the critical temperature Tc(90%) from 85.9 K to 86.7 K and values of the critical current density jc(77 K) from 1 × 106 to 2 × 106 A/cm2. However, up to now the degree of epitaxy of the YBCO thin films on r-plane sapphire with YSZ buffer layer is lower compared to YBCO on MgO(100) as determined by Raman spectroscopy. Nevertheless, large area PLD seems to be a very promising technique for homogeneous coating of 3-inch wafers by epitaxial oxide thin films.

Secondary Neutrals Mass Spectrometry SNMS was used to investigate interdiffusion processes in laser deposited BiSrCaCuO HTSC thin films on various substrate materials. The in-situ deposition of epitaxial Bi2Sr2Ca1Cu2O8+x films requires a substrate temperature just below the decomposition temperature of the 2212 -phase of BiSrCaCuO. This high substrate temperature of about 850°C seems to be the reason for interdiffusion processes of BiSrCaCuO films and MgO(100), YSZ(100) and Si(100) with YSZ or SrTiO3 buffer layers as substrate materials. Therefore, Tc(R=0) of BiSrCaCuO films on silicon with buffer layer is not higher than 70 K at present. SNMS depth profiling gives a more detailed insight into interdiffusion phenomena than other analytical techniques.