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1 results

  • Growth of YSZ and Y2O3 Films on SI(100) by Solid State Epitaxy

  • J. Wecker, TH. Matthee, H. Behner, G. Friedl, K. Samwer
  • Journal:
    MRS Online Proceedings Library Archive / Volume 275 / 1992
    Published online by Cambridge University Press:
    26 February 2011, 107
    Print publication:
    1992

  • Single crystalline YSZ and Y2O3 thin films are grown on Si(100) by e-beam evaporation. The amorphous S1O2 surface layer is removed in-situ by initially growing at low oxygen partial pressures in the case of YSZ or by first evaporating metallic Y for the growth of Y2O3. Epitaxy occurs by a solid state reaction after the SiO2 has been reduced by metallic Zr or Y. For Si/YSZ/Y2O3 the growth is cube on cube while in the case of Si/Y2O3/YSZ the oxide layers grow twinned in (110) orientation. XPS analysis and AES depth profiles reveal the reoxidation of the Si during further growth. Critical temperatures of 90 K and high current densities of 3.2×106 A/cm2 are measured on 150 nm thick YBCO films on SOS/YSZ/Y2O3 proving the excellent quality of the YBCO and the underlying buffer layers.