In the present study, the new system used C3F8 and H2 as source gases. Filament-assisted chemical vapor deposition was utilized. Continuous diamond films were grown on the Si and Mo substrates without any surface pretreatment. The results of scanning electron microscopy, Raman spectroscopy, X-ray diffraction, and atomic force microscopy measurements indicate that the films deposited on the Mo substrates are of high quality. Homoepitaxial diamond films were grown on the high pressure synthetic single crystal diamond substrates. The results show that in our experimental conditions epitaxial films were easily grown on the (111) synthetic diamond substrates and sometimes epitaxial filmse also grown on the (100) synthetic diamond substrates.