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While early intervention in psychosis (EIP) programs have been increasingly implemented across the globe, many initiatives from Africa, Asia and Latin America are not widely known. The aims of the current review are (a) to describe population-based and small-scale, single-site EIP programs in Africa, Asia and Latin America, (b) to examine the variability between programs located in low-and-middle income (LMIC) and high-income countries in similar regions and (c) to outline some of the challenges and provide recommendations to overcome existing obstacles.
Methods
EIP programs in Africa, Asia and Latin America were identified through experts from the different target regions. We performed a systematic search in Medline, Embase, APA PsycInfo, Web of Science and Scopus up to February 6, 2024.
Results
Most EIP programs in these continents are small-scale, single-site programs that serve a limited section of the population. Population-based programs with widespread coverage and programs integrated into primary health care are rare. In Africa, EIP programs are virtually absent. Mainland China is one of the only LMICs that has begun to take steps toward developing a population-based EIP program. High-income Asian countries (e.g. Hong Kong and Singapore) have well-developed, comprehensive programs for individuals with early psychosis, while others with similar economies (e.g. South Korea and Japan) do not. In Latin America, Chile is the only country in the process of providing population-based EIP care.
Conclusions
Financial resources and integration in mental health care, as well as the availability of epidemiological data on psychosis, impact the implementation of EIP programs. Given the major treatment gap of early psychosis in Africa, Latin America and large parts of Asia, publicly funded, locally-led and accessible community-based EIP care provision is urgently needed.
It is unknown whether patient disengagement from early intervention services for psychosis is as prevalent in low- and middle-income countries (LMICs) like India, as it is in high-income countries (HICs). Addressing this gap, we studied two first-episode psychosis programs in Montreal, Canada and Chennai, India. We hypothesized lower service disengagement among patients and higher engagement among families in Chennai, and that family engagement would mediate cross-site differences in patient disengagement.
Methods
Sites were compared on their 2-year patient disengagement and family engagement rates conducting time-to-event analyses and independent samples t tests on monthly contact data. Along with site and family involvement, Cox proportional hazards regression included known predictors of patient disengagement (e.g. gender).
Results
The study included data about 333 patients (165 in Montreal, 168 in Chennai) and their family members (156 in Montreal, 168 in Chennai). More Montreal patients (19%) disengaged before 24 months than Chennai patients (1%), χ2(1, N = 333) = 28.87, p < 0.001. Chennai families had more contact with clinicians throughout treatment (Cohen's d = −1.28). Family contact significantly predicted patient disengagement in Montreal (HR = 0.87, 95% CI 0.81–0.93). Unlike in Chennai, family contact declined over time in Montreal, with clinicians perceiving such contact as not necessary (Cohen's d = 1.73).
Conclusions
This is the first investigation of early psychosis service engagement across a HIC and an LMIC. Patient and family engagement was strikingly higher in Chennai. Maintaining family contact may benefit patient engagement, irrespective of context. Findings also suggest that differential service utilization may underpin cross-cultural variations in psychosis outcomes.
Purported superior outcomes for treatment of psychosis in low- and middle-income (LMICs) compared with high-income (HICs) countries have not been examined in the context of early intervention services (EIS).
Aims
To compare 2-year clinical outcomes in first-episode psychosis (FEP) treated in EIS in Chennai (LMIC) and Montreal (HIC) using a similar EIS treatment protocol and to identify factors associated with any outcome differences.
Method
Patients with FEP treated in EIS in Chennai (n = 168) and Montreal (n = 165) were compared on change in level of symptoms and rate and duration of positive and negative symptom remission over a 2-year period. Repeated-measures analysis of variance, and logistic and linear regression analyses were conducted.
Results
Four patients died in Chennai compared with none in Montreal. Family support was higher for Chennai patients (F = 14.05, d.f. = 1, P < 0.001, ƞp2 = 0.061) and increased over time at both sites (F = 7.0, d.f. = 1.915, P < 0.001, ƞp2 = 0.03). Negative symptom outcomes were significantly better in Chennai for level of symptoms (time × site interaction F = 7.36, d.f. = 1.49, P = 0.002, ƞp2 = 0.03), duration of remission (mean 16.1 v. 9.78 months, t = −7.35, d.f. = 331, P < 0.001, Cohen's d = 0.80) and the proportion of patients in remission (81.5% v. 60.3%, χ2 = 16.12, d.f. = 1, P < 0.001). The site differences in outcome remained robust after adjusting for inter-site differences in other characteristics. Early remission and family support facilitated better outcome on negative symptoms. No significant differences were observed in positive symptom outcomes.
Conclusions
Patients with FEP treated in EIS in LMIC contexts are likely to show better outcome on negative symptoms compared with those in HIC contexts. Early remission and family support may benefit patients across both contexts.
GaN epilayers were grown on m-plane (10-10) sapphire substrates using plasma assisted molecular beam epitaxy. Impact of nitridation on structural and optical properties of GaN film was investigated. The film grown on a nitridated surface resulted in a nonpolar (10-10) orientation while without nitridation caused a semipolar (11-22) orientation. The high resolution X-ray diffraction studies confirmed the orientation of the GaN films. X-ray rocking curve showed better crystallinity of semipolar as compared to nonpolar GaN. Atomic force microscopy showed smoother films in case of nonpolar GaN which might be in account of the nitridation treatment. Room temperature photoluminescence study showed nonpolar GaN to have higher value of compressive strain as compared to semipolar GaN film, which was further confirmed by room temperature Raman spectroscopy. Despite the fact that it is difficult to obtain high-quality nonpolar material due to the planar anisotropic nature of the growth mode, we hereby report the development of non-polar GaN of usable quality, on an m-plane sapphire, involving controlled steps of nitridation.
Gallium nitride (n-type) films of thickness 300nm were grown on c-plane sapphire substrates using plasma assisted molecular beam epitaxy (PA-MBE). High resolution X-ray diffraction and photoluminescence measurements were used to confirm the crystalline and optical qualities of the grown films. Metal-semiconductor Schottky diodes were fabricated using Pt as the Schottky metal and Al as the Ohmic metal contact. Metal-insulator-semiconductor Schottky diodes were also fabricated using HfO2 (10nm) as the insulator material. Diode parameters like barrier height and ideality factor were extracted from I-V measurements. Introduction of HfO2 as the insulator layer leads to better rectifying behavior (forward to reverse current ratio improves from 5.1 to 8.9) with a reduction in reverse leakage current (by 7.4 times), increase in barrier height (from 0.62eV to 0.74eV) and a reduction in ideality factor (from 6 to 4.1) of the Schottky diode.
Non-polar a-plane InGaN films were grown on a r-plane sapphire substrate by plasma assisted molecular beam epitaxy (PAMBE). The growth temperature and Indium flux were varied to optimize the desired composition of In0.23Ga0.77N on the (11-20) a-plane GaN epilayer grown on a (1-102) r-plane sapphire substrate. The structural, morphological and optical properties of the optimized composition have been studied. It was found that highly a-axis oriented InGaN epilayers with no phase separation can be grown at 540 °C with In/Ga flux ratio of 0.72. The composition of indium incorporation in single phase InGaN films was found to be 23% as estimated by high resolution X-ray diffraction. The room temperature band gap energy of single phase InGaN layers was determined by photoluminescence measurement and found to be around 2.56 eV.
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