To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure email@example.com
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
A new device-first low-temperature bonded gallium nitride (GaN)-on-diamond
high-electronic mobility transistor (HEMT) technology with state-of-the-art,
radio frequency (RF) power performance is described. In this process, the
devices were first fabricated on a GaN-on-silicon carbide (SiC) epitaxial wafer
and were subsequently separated from the SiC and bonded onto a
high-thermal-conductivity diamond substrate. Thermal measurements showed that
the GaN-on-diamond devices maintained equivalent or lower junction temperatures
than their GaN-on-SiC counterparts while delivering more than three-times higher
RF power within the same active area. Such results demonstrate that the GaN
device transfer process is capable of preserving intrinsic transistor electrical
performance while taking advantage of the excellent thermal properties of
diamond substrates. Preliminary step-stress and room-temperature, steady-state
life testing shows that the low-temperature bonded GaN-on-diamond device has no
inherently reliability limiting factor. GaN-on-diamond is ideally suited to
wideband electronic warfare (EW) power amplifiers as they are the most thermally
challenging due to continuous wave (CW) operation and the reduced power-added
efficiency obtained with ultra-wide bandwidth circuit implementations.
In an effort to investigate the stability of the surface and hetero-interface of AlGaN/GaN HEMTs during high temperature device processing steps, AlGaN/GaN HEMT samples were subjected to temperatures from 650°C to 1150°C for a period of 30 seconds prior to processing. Hall and photoluminescence measurements were performed on samples before and after temperature stressing. The samples annealed at 700°C and 1150°C were then processed, and electrical parametric data were collected during and after processing. Large increases in HEMT Schottky gate diode reverse leakage current are observed at higher pre-process annealing temperatures, while the low-field mobility decreases.
Email your librarian or administrator to recommend adding this to your organisation's collection.